Investigation of the properties of Al2O3-on-GaN metal-oxide-semiconductor diodes is reported. A new method is shown to calculate the metal-oxide barrier height based on the onset of the Fowler-Nordheim tunnelling current regime in direct bias. The Ni/Al2O3 barrier was extracted, for the first time with this method, and it was found to match other reports in the literature. The dependence of the effectiveness of this method on the oxide thickness is discussed. The breakdown field for Al2O3 was also measured and found to be in agreement with previous reports.
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes / Di Lecce, Valerio; Krishnamoorthy, S.; Esposto, M.; Hung, T. H.; Chini, Alessandro; Rajan, S.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 48:6(2012), pp. 347-348. [10.1049/el.2011.4046]
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes
DI LECCE, Valerio;CHINI, Alessandro;
2012
Abstract
Investigation of the properties of Al2O3-on-GaN metal-oxide-semiconductor diodes is reported. A new method is shown to calculate the metal-oxide barrier height based on the onset of the Fowler-Nordheim tunnelling current regime in direct bias. The Ni/Al2O3 barrier was extracted, for the first time with this method, and it was found to match other reports in the literature. The dependence of the effectiveness of this method on the oxide thickness is discussed. The breakdown field for Al2O3 was also measured and found to be in agreement with previous reports.
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