The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 × 75 μm × 0.7 μm devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and VDS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.
2.1 A/mm current density AlGaN/GaN HEMT / Chini, Alessandro; Coffie, R.; Meneghesso, G.; Zanoni, E.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 39(7):(2003), pp. 625-626. [10.1049/el:20030382]
2.1 A/mm current density AlGaN/GaN HEMT
CHINI, Alessandro;
2003
Abstract
The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 × 75 μm × 0.7 μm devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and VDS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.
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