High-voltage Al0.22Ga0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.

High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates / Xing, H.; Dora, Y.; Chini, Alessandro; Heikman, S.; Keller, S.; Mishra, U. K.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25(4):(2004), pp. 161-163. [10.1109/LED.2004.824845]

High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

CHINI, Alessandro;
2004

Abstract

High-voltage Al0.22Ga0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.
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High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates / Xing, H.; Dora, Y.; Chini, Alessandro; Heikman, S.; Keller, S.; Mishra, U. K.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25(4):(2004), pp. 161-163. [10.1109/LED.2004.824845]
Xing, H.; Dora, Y.; Chini, Alessandro; Heikman, S.; Keller, S.; Mishra, U. K.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/449821
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