BORGARINO, Mattia
 Distribuzione geografica
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Continente #
NA - Nord America 8.553
EU - Europa 4.451
AS - Asia 1.214
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 8
AF - Africa 5
OC - Oceania 4
Totale 14.243
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Nazione #
US - Stati Uniti d'America 8.400
GB - Regno Unito 1.756
DE - Germania 656
SE - Svezia 624
IT - Italia 440
CN - Cina 431
HK - Hong Kong 363
UA - Ucraina 257
FI - Finlandia 215
FR - Francia 206
TR - Turchia 197
CA - Canada 152
SG - Singapore 152
BG - Bulgaria 126
IE - Irlanda 58
RU - Federazione Russa 33
JP - Giappone 32
BE - Belgio 30
NL - Olanda 15
RO - Romania 12
IN - India 11
LT - Lituania 10
MY - Malesia 9
EU - Europa 7
ID - Indonesia 7
BR - Brasile 4
CH - Svizzera 4
IL - Israele 4
KR - Corea 4
AU - Australia 3
AR - Argentina 2
DK - Danimarca 2
ES - Italia 2
IR - Iran 2
MA - Marocco 2
TW - Taiwan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AT - Austria 1
BZ - Belize 1
CI - Costa d'Avorio 1
CO - Colombia 1
CZ - Repubblica Ceca 1
EG - Egitto 1
HR - Croazia 1
ME - Montenegro 1
NZ - Nuova Zelanda 1
PE - Perù 1
PL - Polonia 1
ZA - Sudafrica 1
Totale 14.243
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Città #
Southend 1.295
Fairfield 1.122
Chandler 845
Woodbridge 715
Houston 666
Ashburn 654
Jacksonville 592
Ann Arbor 457
Dearborn 390
Seattle 384
Wilmington 375
Nyköping 363
Hong Kong 357
Cambridge 342
Beijing 155
San Diego 138
Modena 135
Princeton 134
Munich 130
Grafing 127
Sofia 125
Izmir 122
Helsinki 118
Montréal 118
Bremen 109
Mcallen 109
Eugene 102
Singapore 97
Boardman 91
Des Moines 65
Redwood City 54
Dublin 53
New York 52
London 40
Shanghai 31
Brussels 30
Milan 28
Norwalk 19
Hefei 17
Toronto 16
Bologna 15
Nanjing 15
Ottawa 14
Indiana 13
Kilburn 13
Kunming 13
Osaka 10
Chicago 9
Guangzhou 9
Verona 9
Los Angeles 8
Nanchang 8
Philadelphia 8
Carpi 7
Jakarta 7
Parma 7
Wuhan 7
Auburn Hills 6
Chiswick 6
Hounslow 6
Islington 6
Jinan 6
Ravenna 6
Rome 6
Saint Petersburg 6
Tokyo 6
West Jordan 6
Amsterdam 5
Chiyoda-ku 5
Kagoya 5
Naples 5
San Francisco 5
Santa Clara 5
Secaucus 5
Wandsworth 5
Coventry 4
Rimini 4
Spalding 4
Bomporto 3
Bra 3
Campegine 3
Campinas 3
Duncan 3
Edinburgh 3
Hangzhou 3
Hanover 3
Horia 3
Lappeenranta 3
Lyon 3
Moscow 3
Novoli 3
Pavia 3
Phoenix 3
Prescot 3
Pune 3
Reggio Nell'emilia 3
Shenyang 3
Taizhou 3
Teiul 3
Tianjin 3
Totale 11.122
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 582
0.35um SiGe BiCMOS X-Band PLO 346
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors 322
15 GHz quadrature voltage controlled oscillator in 130 nm CMOS technology 207
A 12GHz 30mW 130nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator 199
A 130nm CMOS Tunable Digital Frequency Divider for Dual-Band Microwave Radiometer 182
SiGe BiCMOS X-Band Integrated Radiometer 172
An ULP and Very Efficient Adaptively Biased LDO Regulator for Harvesting Application 172
System-on-Chip Microwave Radiometer for Thermal Remote Sensing and its Application to the Forest Fire Detection 171
A K-band BiCMOS low duty-cycle resistive mixer 169
65 nm CMOS SSB mixer for UWB synthesiser 166
Noise properties in SiGe BiCMOS devices 166
Degradation based long-term reliability assessment for electronic components in submarine applications 166
Appunti di Microelettronica 164
An empirical bipolar device nonlinear noise modeling approach for large-signal microwave circuit analysis 162
Comparison between RTW VCO and LC QVCO 12 GHz PLLs 162
A broadband RF 65nm CMOS front-end for cable TV reception 161
130nm CMOS SAR-ADC with Low Complexity Digital Control Logic 159
A Non-linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 158
A 5.2mW Ku-Band CMOS Injection-Locked Frequency Doubler with Differential Input / Output 158
A Low Power Ku Phase Locked Oscillator in Low Cost 130nm CMOS Technology 154
High linearity CMOS mixer for domotic 5 GHz WLAN sliding-IF receivers 152
Low phase noise 130nm CMOS ring VCO 152
Failure mechanisms in compound semiconductor electron devices 151
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs 151
Comparison between RTW VCO and LC QVC 12 GHz PLLs 151
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 151
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 148
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 148
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 144
Clock-less 8-bit SAR-ADC with delay-line based digital control circuit 144
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 143
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 143
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors 142
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations 142
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 142
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs 141
Reliability investigation in SiGe HBT’s 141
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 141
Identification procedures for the charge-controlled nonlinear noise model of microwave electron devices 140
Noise behavior in SiGe devices 139
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 138
Topology investigation for the low frequency noise compact modelling of bipolar transistors 137
Reliability physics of compound semiconductor transistors for microwave applications 137
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling 136
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 136
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 136
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology 132
Gate-lag effects in AlGaAs/GaAs power HFET's 132
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 132
HBT small-signal model extraction using a genetic algorithm 131
Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications 131
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 131
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications 128
Self-Oscillation Free 0.35um Si/SiGe BiCMOS X-Band Digital Frequency Divider 127
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 127
Ku-Band Radiometer Antenna Characterization in University Test Facilities 126
Microstrip Array Antenna Design for a Radiometric Ground-Based Fire Detection Application 125
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 125
Hydrogen induced degradation in GaInP/GaAs HBTs revealed by low frequency noise measurements 125
X-band silicon integrated radiometer 124
15GHz Dual-modulus 130nm CMOS Digital Frequency Divider 124
Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs 124
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 123
Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator 122
Electrical and thermal simulation of local effects for electromigration 121
Hot Carrier Effects in Si/SiGe HBT's 121
On the limitations of transipedance amplifiers as tools for low-frequency noise characterization 119
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 118
Negative Vbe shift due to base dopant outdiffusion in DHBT 116
C Band DROs Using Microwave Bipolar Devices 111
Circuit-Based Compact Model of Electron Spin Qubit 108
Building Blocks for a 5GHz WLAN Transmitter in 0.35mm Si/SiGe BiCMOS 106
The low frequency noise in electron devices: an engineering sight 105
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 104
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 101
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices 101
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 100
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction 100
Mélamgeur résistif à sous-échantillonnage dans la bande 46-65 GHz intégré en technologie BiCMOS 0.13 µm 99
A Phase Noise Performance Study of 15 GHz Phase Locked Loop in 130nm CMOS Technology for DVB-S Application 98
Ku-Band PLL functional blocks 97
Semi-Automated Experimental Set-Up CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors 96
Ku-Band receiver functional blocks 96
Low Frequency Noise in Microelectronics 92
On the Transimpedance Amplifiers in the Low frequency Noise Characterizarion 92
Esercizi di Elettronica Digitale 90
Reliability of Gaas-based HBTs 90
Non-linear Measurement-Based Noise Models of Electron Devices for Low Phase-Noise Oscillator Design 89
Reliability issues in compound semiconductor heterojunction devices 89
Propriétés electriques des transistors bipolaires à hétérojonction sur InP pour des applications optoélectroniques monolithiques 86
Hot carriers Effects on the correlation resistance in Si/SiGe Heterojucntion Bipolar Transistors 84
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs 82
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs 82
Empirical Nonlinear Noise Models of Field Effect Devices for Microwave Circuit Large-Signal Noise Analysis 79
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs 75
Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s 74
On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications 70
Convertisseur des fréquences BiCMOS en band K basé sur un mélange passif à faibles pertes 63
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider 59
Totale 13.626
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Categoria #
all - tutte 56.797
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.797
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.895 197 218 104 177 268 380 424 314 252 125 211 225
2020/20212.455 225 96 198 173 328 229 189 315 315 220 77 90
2021/20222.174 131 262 148 100 74 229 122 99 229 159 388 233
2022/20232.294 306 261 134 253 304 333 62 167 332 34 60 48
2023/20241.578 48 94 185 123 372 169 63 228 38 57 20 181
2024/2025148 148 0 0 0 0 0 0 0 0 0 0 0
Totale 14.431