BORGARINO, Mattia
 Distribuzione geografica
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Continente #
NA - Nord America 7971
EU - Europa 4088
AS - Asia 436
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 5
AF - Africa 4
OC - Oceania 4
Totale 12516
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Nazione #
US - Stati Uniti d'America 7819
GB - Regno Unito 1715
DE - Germania 607
SE - Svezia 590
IT - Italia 358
UA - Ucraina 256
TR - Turchia 197
CN - Cina 173
FR - Francia 167
CA - Canada 151
BG - Bulgaria 125
FI - Finlandia 102
IE - Irlanda 63
BE - Belgio 43
JP - Giappone 32
RU - Federazione Russa 23
RO - Romania 12
NL - Olanda 11
MY - Malesia 9
IN - India 8
EU - Europa 7
HK - Hong Kong 5
CH - Svizzera 4
IL - Israele 4
AU - Australia 3
KR - Corea 3
LT - Lituania 3
SG - Singapore 3
AR - Argentina 2
DK - Danimarca 2
ES - Italia 2
IR - Iran 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AT - Austria 1
BR - Brasile 1
BZ - Belize 1
CI - Costa d'Avorio 1
CO - Colombia 1
CZ - Repubblica Ceca 1
EG - Egitto 1
HR - Croazia 1
MA - Marocco 1
ME - Montenegro 1
NZ - Nuova Zelanda 1
PE - Perù 1
PL - Polonia 1
ZA - Sudafrica 1
Totale 12516
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Città #
Southend 1295
Fairfield 1122
Chandler 845
Woodbridge 715
Houston 666
Jacksonville 592
Ann Arbor 457
Ashburn 427
Dearborn 390
Seattle 383
Wilmington 375
Nyköping 363
Cambridge 342
San Diego 138
Princeton 134
Munich 130
Grafing 127
Modena 125
Sofia 125
Izmir 122
Montréal 118
Bremen 109
Mcallen 109
Eugene 102
Des Moines 65
Beijing 59
Dublin 59
Redwood City 54
Brussels 43
London 38
Milan 23
Norwalk 19
Hefei 17
Toronto 16
Nanjing 15
Ottawa 14
Indiana 13
Kunming 13
Bologna 12
Osaka 10
Boardman 9
New York 9
Philadelphia 9
Verona 9
Helsinki 8
Nanchang 8
Islington 7
Auburn Hills 6
Guangzhou 6
Jinan 6
Saint Petersburg 6
Tokyo 6
Chiyoda-ku 5
Kagoya 5
Los Angeles 5
Rome 5
San Francisco 5
Spalding 4
Wuhan 4
Carpi 3
Duncan 3
Edinburgh 3
Hanover 3
Horia 3
Novoli 3
Parma 3
Pavia 3
Reggio Nell'emilia 3
Rimini 3
Shenyang 3
Taizhou 3
Teiul 3
Tianjin 3
Trento 3
Vilnius 3
Zhengzhou 3
Abbiategrasso 2
Amsterdam 2
Antibes 2
Austin 2
Baotou 2
Bartlesville 2
Buffalo 2
Casoria 2
Cattolica 2
Chengdu 2
Chennai 2
Chicago 2
Delft 2
Ferrara 2
Fuzhou 2
Guiyang 2
Haifa 2
Hangzhou 2
Kumar 2
Lausanne 2
Lent 2
Macomer 2
Melbourne 2
Nice 2
Totale 10002
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 570
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors 311
0.35um SiGe BiCMOS X-Band PLO 277
15 GHz quadrature voltage controlled oscillator in 130 nm CMOS technology 188
A 12GHz 30mW 130nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator 180
SiGe BiCMOS X-Band Integrated Radiometer 159
A 130nm CMOS Tunable Digital Frequency Divider for Dual-Band Microwave Radiometer 159
An ULP and Very Efficient Adaptively Biased LDO Regulator for Harvesting Application 152
65 nm CMOS SSB mixer for UWB synthesiser 149
Comparison between RTW VCO and LC QVCO 12 GHz PLLs 149
A K-band BiCMOS low duty-cycle resistive mixer 147
Noise properties in SiGe BiCMOS devices 147
An empirical bipolar device nonlinear noise modeling approach for large-signal microwave circuit analysis 146
Degradation based long-term reliability assessment for electronic components in submarine applications 146
A Non-linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 143
System-on-Chip Microwave Radiometer for Thermal Remote Sensing and its Application to the Forest Fire Detection 143
A broadband RF 65nm CMOS front-end for cable TV reception 143
Failure mechanisms in compound semiconductor electron devices 141
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs 140
A Low Power Ku Phase Locked Oscillator in Low Cost 130nm CMOS Technology 140
A 5.2mW Ku-Band CMOS Injection-Locked Frequency Doubler with Differential Input / Output 140
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 139
Low phase noise 130nm CMOS ring VCO 139
Appunti di Microelettronica 138
Comparison between RTW VCO and LC QVC 12 GHz PLLs 138
High linearity CMOS mixer for domotic 5 GHz WLAN sliding-IF receivers 137
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 137
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 137
Reliability investigation in SiGe HBT’s 135
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 133
130nm CMOS SAR-ADC with Low Complexity Digital Control Logic 133
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs 132
Clock-less 8-bit SAR-ADC with delay-line based digital control circuit 131
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 130
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors 130
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 129
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 128
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling 127
Noise behavior in SiGe devices 127
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 127
Identification procedures for the charge-controlled nonlinear noise model of microwave electron devices 126
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 125
Topology investigation for the low frequency noise compact modelling of bipolar transistors 124
Reliability physics of compound semiconductor transistors for microwave applications 123
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology 121
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications 121
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 121
HBT small-signal model extraction using a genetic algorithm 120
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations 120
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 119
Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications 119
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 119
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 118
Gate-lag effects in AlGaAs/GaAs power HFET's 117
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 117
Self-Oscillation Free 0.35um Si/SiGe BiCMOS X-Band Digital Frequency Divider 115
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 115
Hydrogen induced degradation in GaInP/GaAs HBTs revealed by low frequency noise measurements 114
Ku-Band Radiometer Antenna Characterization in University Test Facilities 112
Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator 112
X-band silicon integrated radiometer 111
Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs 110
Electrical and thermal simulation of local effects for electromigration 109
Hot Carrier Effects in Si/SiGe HBT's 109
Microstrip Array Antenna Design for a Radiometric Ground-Based Fire Detection Application 108
Negative Vbe shift due to base dopant outdiffusion in DHBT 107
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 106
15GHz Dual-modulus 130nm CMOS Digital Frequency Divider 105
On the limitations of transipedance amplifiers as tools for low-frequency noise characterization 103
C Band DROs Using Microwave Bipolar Devices 99
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 97
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 96
The low frequency noise in electron devices: an engineering sight 94
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 90
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 90
Building Blocks for a 5GHz WLAN Transmitter in 0.35mm Si/SiGe BiCMOS 88
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices 88
Mélamgeur résistif à sous-échantillonnage dans la bande 46-65 GHz intégré en technologie BiCMOS 0.13 µm 87
Semi-Automated Experimental Set-Up CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors 86
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction 85
Ku-Band receiver functional blocks 85
Ku-Band PLL functional blocks 83
Reliability of Gaas-based HBTs 81
Low Frequency Noise in Microelectronics 79
Non-linear Measurement-Based Noise Models of Electron Devices for Low Phase-Noise Oscillator Design 78
On the Transimpedance Amplifiers in the Low frequency Noise Characterizarion 78
Reliability issues in compound semiconductor heterojunction devices 77
Esercizi di Elettronica Digitale 76
A Phase Noise Performance Study of 15 GHz Phase Locked Loop in 130nm CMOS Technology for DVB-S Application 76
Circuit-Based Compact Model of Electron Spin Qubit 75
Hot carriers Effects on the correlation resistance in Si/SiGe Heterojucntion Bipolar Transistors 73
Empirical Nonlinear Noise Models of Field Effect Devices for Microwave Circuit Large-Signal Noise Analysis 71
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs 70
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs 69
Propriétés electriques des transistors bipolaires à hétérojonction sur InP pour des applications optoélectroniques monolithiques 69
Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s 67
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs 66
Convertisseur des fréquences BiCMOS en band K basé sur un mélange passif à faibles pertes 53
On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications 46
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider 44
Totale 12159
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Categoria #
all - tutte 28756
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28756
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201812 0000 00 00 00012
2018/20191522 54104994 10990 1238 17146413355
2019/20202895 197218104177 268380 424314 252125211225
2020/20212455 22596198173 328229 189315 3152207790
2021/20222174 131262148100 74229 12299 229159388233
2022/20232289 306261134253 304333 68172 34638668
Totale 12700