This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these devices and we defined some geometrical rules allowing the design of low noise amplifier. Concerning their low frequency noise performances, the devices exhibit 1/f noise source with an excess corner noise frequency in the 1 kHz range which is close to the state of the art for a monolithic technology. We further developed a scaleable non linear low frequency noise model implementable in a commercial microwave software. Finally, additional residual phase noise measurements confirmed the impressive capabilities of SiGe HBT technology for low noise RF applications

Noise properties in SiGe BiCMOS devices / J. G., Tartarin; R., Plana; Borgarino, Mattia; H., Lafontaine; M., Regis; O., Llopis; S., Kovacic. - STAMPA. - Not available:(1999), pp. 131-136. ((Intervento presentato al convegno Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications tenutosi a London, UK nel 11/22/1999 - 11/23/1999.

Noise properties in SiGe BiCMOS devices

BORGARINO, Mattia;
1999

Abstract

This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these devices and we defined some geometrical rules allowing the design of low noise amplifier. Concerning their low frequency noise performances, the devices exhibit 1/f noise source with an excess corner noise frequency in the 1 kHz range which is close to the state of the art for a monolithic technology. We further developed a scaleable non linear low frequency noise model implementable in a commercial microwave software. Finally, additional residual phase noise measurements confirmed the impressive capabilities of SiGe HBT technology for low noise RF applications
Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications
London, UK
11/22/1999 - 11/23/1999
Not available
131
136
J. G., Tartarin; R., Plana; Borgarino, Mattia; H., Lafontaine; M., Regis; O., Llopis; S., Kovacic
Noise properties in SiGe BiCMOS devices / J. G., Tartarin; R., Plana; Borgarino, Mattia; H., Lafontaine; M., Regis; O., Llopis; S., Kovacic. - STAMPA. - Not available:(1999), pp. 131-136. ((Intervento presentato al convegno Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications tenutosi a London, UK nel 11/22/1999 - 11/23/1999.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/594458
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