This work for the first time experimentally investigates the hot carrier effects on the RF characteristics (up to 30 GHz) of Si/SiGe heterojunction bipolar transistors (HBT's). Reverse base-emitter voltage stresses were applied at room temperature on BiCMOS compatible, sub-micron transistors. The main observed degradation is a decrease of S 21. It was found that this degradation is minimized (maximized) when biasing at constant collector (base) current. These results may be valuable indications also for degradations induced by ionizing radiations.
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors / Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil. - In: IEEE MICROWAVE AND GUIDED WAVE LETTERS. - ISSN 1051-8207. - STAMPA. - 10:11(2000), pp. 466-468. [10.1109/75.888834]
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
BORGARINO, Mattia;
2000
Abstract
This work for the first time experimentally investigates the hot carrier effects on the RF characteristics (up to 30 GHz) of Si/SiGe heterojunction bipolar transistors (HBT's). Reverse base-emitter voltage stresses were applied at room temperature on BiCMOS compatible, sub-micron transistors. The main observed degradation is a decrease of S 21. It was found that this degradation is minimized (maximized) when biasing at constant collector (base) current. These results may be valuable indications also for degradations induced by ionizing radiations.
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