An empirical nonlinear noise model for bipolar transistors, deriving from the charge-controlled nonlinear noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both bias-dependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise model.
A Non-linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators / Florian, C; TRAVERSO P., A; Borgarino, Mattia; Filicori, F.. - STAMPA. - 1:(2006), pp. 659-662. (Intervento presentato al convegno 2006 IEEE MTT-S International Microwave Symposium Digest tenutosi a San Francisco, CA, usa nel 11-16 June 2006) [10.1109/MWSYM.2006.249700].
A Non-linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators
BORGARINO, Mattia;
2006
Abstract
An empirical nonlinear noise model for bipolar transistors, deriving from the charge-controlled nonlinear noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both bias-dependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise model.
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