This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results have been implemented into a nonlinear Gummel Poon model which has been validated through the design of a DRO made of an integrated SiGe negative resistance in the 10 GHz range. We have obtained phase noise of -105 dBc/Hz at 10 kHz offset, which is close to the state of the art, and we have demonstrated a design technique that provides an accurate phase noise prediction.
Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator / L., Bary; G., Cibiel; I., Telliez; J., Rayssac; A., Rennane; C., Boulanger; O., Llopis; Borgarino, Mattia; R., Plana; J., Graffeuil. - STAMPA. - 1:(2002), pp. 275-278. (Intervento presentato al convegno International Microwave Symposium tenutosi a Seattle, WA nel 06/02/2002 - 06/07/2002) [10.1109/MWSYM.2002.1011610].
Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator
BORGARINO, Mattia;
2002
Abstract
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results have been implemented into a nonlinear Gummel Poon model which has been validated through the design of a DRO made of an integrated SiGe negative resistance in the 10 GHz range. We have obtained phase noise of -105 dBc/Hz at 10 kHz offset, which is close to the state of the art, and we have demonstrated a design technique that provides an accurate phase noise prediction.
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