In the present paper we evaluated the fabrication process of AlGaAs/GaAs heterojunction Bipolar Transistors (HBT's) by means of low frequency noise characterizations carried out in the 100Hz-100kHz frequency range. We investigated the spectra of the base current fluctuations. The obtained results are compared with the data reported in the literature. The fabrication technology and the experimental set-up are briefly described.
Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s / Borgarino, Mattia; M., Peroni; A., Cetronio; Fantini, Fausto. - STAMPA. - (2002), pp. 377-380. ( 10th European Gallium Arsenide and other Semiconductors Application Symposium, GAAS 2002 Milano (Italy) 23-24 settembre 2002).
Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s
BORGARINO, Mattia;FANTINI, Fausto
2002
Abstract
In the present paper we evaluated the fabrication process of AlGaAs/GaAs heterojunction Bipolar Transistors (HBT's) by means of low frequency noise characterizations carried out in the 100Hz-100kHz frequency range. We investigated the spectra of the base current fluctuations. The obtained results are compared with the data reported in the literature. The fabrication technology and the experimental set-up are briefly described.
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