This paper presents an overview of SiGe technologies and their corresponding noise properties both in the high frequency and low frequency range. We demonstrate that SiGe bipolar technology exhibits impressive low frequency noise performance with an excess corner noise frequency in the 1kHz range. These results have been validated by low phase noise microwave oscillators based on SiGe material.
Noise behavior in SiGe devices / M., Regis; Borgarino, Mattia; L., Bary; O., Llopis; J., Graffeuil; L., Escotte; U., Koenig; R., Plana. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 45:11(2001), pp. 1891-1897. [10.1016/S0038-1101(01)00229-5]
Noise behavior in SiGe devices
BORGARINO, Mattia;
2001
Abstract
This paper presents an overview of SiGe technologies and their corresponding noise properties both in the high frequency and low frequency range. We demonstrate that SiGe bipolar technology exhibits impressive low frequency noise performance with an excess corner noise frequency in the 1kHz range. These results have been validated by low phase noise microwave oscillators based on SiGe material.
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