This paperfocuses on the noise trends that must be characterized in order to design low-noise, low-cost RF circuits in a commercial SiGe BiCMOS technology. We present low frequency noise and high frequency behavior associated with this technology and the design of a broad band active balun, which has been optimized with respect to the noise and the phase drift.
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications / Borgarino, Mattia; S., Kovacic; H., Lafontaine; Z. F., Zhou; R., Plana. - STAMPA. - 2:(1999), pp. 373-378. (Intervento presentato al convegno European Microwave Conference tenutosi a Munich (Germany) nel 06/10/1999-08/10/1999).
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications
BORGARINO, Mattia;
1999
Abstract
This paperfocuses on the noise trends that must be characterized in order to design low-noise, low-cost RF circuits in a commercial SiGe BiCMOS technology. We present low frequency noise and high frequency behavior associated with this technology and the design of a broad band active balun, which has been optimized with respect to the noise and the phase drift.
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