The paper reports on the design in a 0.35μm SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5mm2, dissipated about 0.5W, and is able to detect a signal as low as -90dBm up to 10GHz.
SiGe BiCMOS X-Band Integrated Radiometer / Ducati, Fabio; Mazzanti, Andrea; Borgarino, Mattia; M., Pifferi. - ELETTRONICO. - 1:(2008), pp. 1257-1260. (Intervento presentato al convegno 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008 tenutosi a St. Julian's, mlt nel 30th August - 3rd Septemebr, 2008) [10.1109/ICECS.2008.4675088].
SiGe BiCMOS X-Band Integrated Radiometer
DUCATI, Fabio;MAZZANTI, Andrea;BORGARINO, Mattia;
2008
Abstract
The paper reports on the design in a 0.35μm SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5mm2, dissipated about 0.5W, and is able to detect a signal as low as -90dBm up to 10GHz.
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