This paper reports on hot electron (HE) degradation of 0.25-μm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs PHEMT's by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias condition.

Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s / Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 45:(1998), pp. 366-372.

Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s.

BORGARINO, Mattia;FANTINI, Fausto
1998

Abstract

This paper reports on hot electron (HE) degradation of 0.25-μm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs PHEMT's by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias condition.
45
366
372
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s / Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 45:(1998), pp. 366-372.
Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/612297
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 58
  • ???jsp.display-item.citation.isi??? 51
social impact