Life tests were performed at room temperature on Si-SiGe HBTs by reverse biasing the base-emitter junction under open collector conditions. The effects on the DC, the low-frequency noise, and the microwave characteristics were investigated both by the analysis of experimental data and by simulations and analytical models. The stress-induced surface damage close to the emitter perimeter was identified to be the degradation mechanism mainly responsible for the variations observed, in all the investigated parameters
Hot Carrier Effects in Si/SiGe HBT's / Borgarino, Mattia; J., Kuchenbecker; Jg, Tartarin; L., Bary; T., Kovacic; R., Plana; Fantini, Fausto; J., Graffeuil. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - STAMPA. - 1:2(2001), pp. 86-94. [10.1109/7298.956701]
Hot Carrier Effects in Si/SiGe HBT's
BORGARINO, Mattia;FANTINI, Fausto;
2001
Abstract
Life tests were performed at room temperature on Si-SiGe HBTs by reverse biasing the base-emitter junction under open collector conditions. The effects on the DC, the low-frequency noise, and the microwave characteristics were investigated both by the analysis of experimental data and by simulations and analytical models. The stress-induced surface damage close to the emitter perimeter was identified to be the degradation mechanism mainly responsible for the variations observed, in all the investigated parameters
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