This paper reports a divide-by-512 frequency divider designed in a 0.35µm Si/SiGe BiCMOS technology. The 600x1200um2 circuit operates up to 9.5 GHz dissipating 120mW. Self-oscillations are avoided thanks to an original solution based on the use of an RF carrier detector.
Self-Oscillation Free 0.35um Si/SiGe BiCMOS X-Band Digital Frequency Divider / Ducati, Fabio; Pifferi, Marco; Borgarino, Mattia. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 7:(2008), pp. 473-475.
Self-Oscillation Free 0.35um Si/SiGe BiCMOS X-Band Digital Frequency Divider
DUCATI, Fabio;PIFFERI, Marco;BORGARINO, Mattia
2008
Abstract
This paper reports a divide-by-512 frequency divider designed in a 0.35µm Si/SiGe BiCMOS technology. The 600x1200um2 circuit operates up to 9.5 GHz dissipating 120mW. Self-oscillations are avoided thanks to an original solution based on the use of an RF carrier detector.
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