The present paper reports on a X-band PLO designed in a 0.35um SiGe BiCMOS low-cost technology. All blocks of the PLL are integrated in the same chip. The output power is about -7 dBm and the in-band and out-band phase noise resulted to be –75dBc/Hz at an offset frequency of 10kHz and –95dBc/Hz at an offset frequency of 500kHz, respectively. The circuit area is 1350x1100 μm2 and the drained current is 116mA.
0.35um SiGe BiCMOS X-Band PLO / Pifferi, Marco; Ducati, Fabio; Mazzanti, Andrea; Borgarino, Mattia. - ELETTRONICO. - 1:(2007), pp. 1-4. (Intervento presentato al convegno Sophia Antipolis Microelectronics Forum tenutosi a Sophia Antipolis, Francia nel 3-4 ottobre 2007).
0.35um SiGe BiCMOS X-Band PLO
PIFFERI, Marco;DUCATI, Fabio;MAZZANTI, Andrea;BORGARINO, Mattia
2007
Abstract
The present paper reports on a X-band PLO designed in a 0.35um SiGe BiCMOS low-cost technology. All blocks of the PLL are integrated in the same chip. The output power is about -7 dBm and the in-band and out-band phase noise resulted to be –75dBc/Hz at an offset frequency of 10kHz and –95dBc/Hz at an offset frequency of 500kHz, respectively. The circuit area is 1350x1100 μm2 and the drained current is 116mA.
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