Most of the applications of the Heterojunction Bipolar Transistors (HBTs) are in the field of telecommunications, where device reliability is a key issue. This work reports on a major HBT reliability issue: base dopant stability. In particualr, the most two widely employed base dopnats are addressed: Beryllium and Carbon. The instability phenomena typical of each doping impurity, and their effects on the HBT cahracteristics are briefly overviewed in this paper.
Reliability of Gaas-based HBTs / Fantini, Fausto; Borgarino, Mattia; L., Cattani; R., Menozzi. - STAMPA. - Not available:(1998), pp. 119-124. (Intervento presentato al convegno International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications tenutosi a Manchester (UK) nel 23 - 24 November 1998).
Reliability of Gaas-based HBTs
FANTINI, Fausto;BORGARINO, Mattia;
1998
Abstract
Most of the applications of the Heterojunction Bipolar Transistors (HBTs) are in the field of telecommunications, where device reliability is a key issue. This work reports on a major HBT reliability issue: base dopant stability. In particualr, the most two widely employed base dopnats are addressed: Beryllium and Carbon. The instability phenomena typical of each doping impurity, and their effects on the HBT cahracteristics are briefly overviewed in this paper.
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