Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs HFET's and then compared with transconductance frequency dispersion measurements and studied by means of numerical simulations accounting for the occupation dynamics of surface deep-acceptor traps. We have found a clear direct correlation between the amount of gate-lag and of transconductance dispersion. The gate-lag tam-off transients of increasingly degraded devices have been accurately simulated by suitably increasing the surface trap density. (C) 2001 Elsevier Science Ltd. All rights reserved.
Gate-lag effects in AlGaAs/GaAs power HFET's / Borgarino, Mattia; G., Sozzi; Mazzanti, Andrea; Verzellesi, Giovanni. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41:9-10(2001), pp. 1585-1589. [10.1016/S0026-2714(01)00191-3]
Gate-lag effects in AlGaAs/GaAs power HFET's
BORGARINO, Mattia;MAZZANTI, Andrea;VERZELLESI, Giovanni
2001
Abstract
Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs HFET's and then compared with transconductance frequency dispersion measurements and studied by means of numerical simulations accounting for the occupation dynamics of surface deep-acceptor traps. We have found a clear direct correlation between the amount of gate-lag and of transconductance dispersion. The gate-lag tam-off transients of increasingly degraded devices have been accurately simulated by suitably increasing the surface trap density. (C) 2001 Elsevier Science Ltd. All rights reserved.
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