Anomalous (>3) ideality factors in the base current of AlGaAs/GaAs HBTs, resulting in poor current gain performance, are modeled assuming a tunneling mechanism in the base-emitter space charge region assisted by centers in the forbidden gap. The model is validated by means of measurement of forward I-V characteristics as a function of temperature.
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs / Borgarino, Mattia; R., Menozzi; Fantini, Fausto; M., Schussler; H. L., Hartnagel. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 7:(1995), pp. 76-78.
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs
BORGARINO, Mattia;FANTINI, Fausto;
1995
Abstract
Anomalous (>3) ideality factors in the base current of AlGaAs/GaAs HBTs, resulting in poor current gain performance, are modeled assuming a tunneling mechanism in the base-emitter space charge region assisted by centers in the forbidden gap. The model is validated by means of measurement of forward I-V characteristics as a function of temperature.
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