The impact of the base dopant lavel on the stability of Be-doped AlGaAs/GaAs HBTs is investigated by means of forward current stress carried out at room temperature. The results show that the degradation mechanism is due to the Beryllium outdiffusion: the higher is the base dopant concentration, the larger the degradation.
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices / Borgarino, Mattia; R., Losi; Fantini, Fausto; M., Schussler; H. L., Hartnagel; S., Franchi; A., Bosacchi. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 9:(1997), pp. 56-59.
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices
BORGARINO, Mattia;FANTINI, Fausto;
1997
Abstract
The impact of the base dopant lavel on the stability of Be-doped AlGaAs/GaAs HBTs is investigated by means of forward current stress carried out at room temperature. The results show that the degradation mechanism is due to the Beryllium outdiffusion: the higher is the base dopant concentration, the larger the degradation.
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