The present paper focuses on solutions of the experimental difficulties rising up when a full low frequency noise characterization of bipolar transistors exhibiting high noise levels and low input dynamic input impedances is carried out using a direct characterization technique. First, a typical direct characterization experimental set-up is introduced pointing out the difficulties to be faced when a high noise, low input impedance transistor is addressed. Then, an improved version of the experimental set-up is proposed and successfully applied to AlGaAs/GaAs heterojunction bipolar transistors.
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors / Borgarino, Mattia. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 49:8(2005), pp. 1361-1369. [10.1016/j.sse.2005.06.016]
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors
BORGARINO, Mattia
2005
Abstract
The present paper focuses on solutions of the experimental difficulties rising up when a full low frequency noise characterization of bipolar transistors exhibiting high noise levels and low input dynamic input impedances is carried out using a direct characterization technique. First, a typical direct characterization experimental set-up is introduced pointing out the difficulties to be faced when a high noise, low input impedance transistor is addressed. Then, an improved version of the experimental set-up is proposed and successfully applied to AlGaAs/GaAs heterojunction bipolar transistors.
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