EnglishThe present paper focuses on solutions of the experimental difficulties rising up when a full low frequency noise characterization of bipolar transistors exhibiting high noise levels and low input dynamic input impedances is carried out using a direct characterization technique. First, a typical direct characterization experimental set-up is introduced pointing out the difficulties to be faced when a high noise, low input impedance transistor is addressed. Then, an improved version of the experimental set-up is proposed and successfully applied to AlGaAs/GaAs heterojunction bipolar transistors.
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors / Borgarino, Mattia. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 49(2005), pp. 1361-1369.
| Data di pubblicazione: | 2005 | |
| Titolo: | Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors | |
| Autore/i: | Borgarino, Mattia | |
| Autore/i UNIMORE: | ||
| Rivista: | ||
| Volume: | 49 | |
| Pagina iniziale: | 1361 | |
| Pagina finale: | 1369 | |
| Codice identificativo ISI: | WOS:000232269600017 | |
| Codice identificativo Scopus: | 2-s2.0-24144496838 | |
| Citazione: | Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors / Borgarino, Mattia. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 49(2005), pp. 1361-1369. | |
| Tipologia | Articolo su rivista |
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