Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors

Borgarino, Mattia

The present paper focuses on solutions of the experimental difficulties rising up when a full low frequency noise characterization of bipolar transistors exhibiting high noise levels and low input dynamic input impedances is carried out using a direct characterization technique. First, a typical direct characterization experimental set-up is introduced pointing out the difficulties to be faced when a high noise, low input impedance transistor is addressed. Then, an improved version of the experimental set-up is proposed and successfully applied to AlGaAs/GaAs heterojunction bipolar transistors.

Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors / Borgarino, Mattia. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 49(2005), pp. 1361-1369.

Data di pubblicazione:	2005
Titolo:	Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors
Autore/i:	Borgarino, Mattia
Autore/i UNIMORE:	BORGARINO, Mattia
Rivista:	SOLID-STATE ELECTRONICS
Volume:	49
Pagina iniziale:	1361
Pagina finale:	1369
Codice identificativo ISI:	WOS:000232269600017
Codice identificativo Scopus:	2-s2.0-24144496838
Citazione:	Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors / Borgarino, Mattia. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 49(2005), pp. 1361-1369.
Tipologia	Articolo su rivista

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http://hdl.handle.net/11380/305803

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