An empirical bipolar transistor nonlinear noise model for the large-signal (LS) noise analysis of microwave circuits is described. The model is derived according to the charge-controlled nonlinear noise behavioral modeling approach, and includes nonlinearly controlled equivalent noise (EN) generators describing the low-frequency (LF) noise up-conversion encountered in LS RF operation. LS-modulated shot-noise sources and parametric LF noise in parasitic resistors are also taken into account for improved model accuracy. Details for the implementation of the. proposed cyclostationary EN generators in the framework of a computer-aided design tool are presented. As an application example, a simplified version of the proposed nonlinear noise model for two GalnP-GaAs HBTs has been formulated and empirically characterized on the basis of both bias-dependent LF noise and phase-noise measurements. Measured and simulated noise performance of a monolithic voltage-controlled oscillator over a set of different operating conditions is shown for the validation of the proposed approach.
|Anno di pubblicazione:||2006|
|Titolo:||An empirical bipolar device nonlinear noise modeling approach for large-signal microwave circuit analysis|
|Autori:||PA Traverso; C. Florian; M. Borgarino; F. Filicori|
|Appare nelle tipologie:||Articolo su rivista|
I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris