The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs HFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs / E., Tediosi; Borgarino, Mattia; Verzellesi, Giovanni; R., Menozzi; G., Sozzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 37:11(2001), pp. 719-720. [10.1049/el:20010478]
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs
BORGARINO, Mattia;VERZELLESI, Giovanni;
2001
Abstract
The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs HFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.
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