The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs HFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs / E., Tediosi; Borgarino, Mattia; Verzellesi, Giovanni; R., Menozzi; G., Sozzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 37 (11):(2001), pp. 719-720.

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs

BORGARINO, Mattia;VERZELLESI, Giovanni;
2001-01-01

Abstract

The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs HFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.
37 (11)
719
720
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs / E., Tediosi; Borgarino, Mattia; Verzellesi, Giovanni; R., Menozzi; G., Sozzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 37 (11):(2001), pp. 719-720.
E., Tediosi; Borgarino, Mattia; Verzellesi, Giovanni; R., Menozzi; G., Sozzi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/304455
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