A novel broadband RF front-end in 65nm CMOS technology is presented. The front-end serves to precondition the incoming RFspectrum for further processing in a cable TV receiver architecture where RF channel selection and down conversion are done in digitaldomain. The analog front-end consists of a broadband highly linear low-noise amplifier followed by a variable gain RF amplifier. An original broadband circuit topology for the amplifiers is adopted.The fabricated front-end exhibits a bandwidth of 50–1050 MHz, a variable gain, which spans from 12 to 37 dB with a 0.2 dB step, anOIP3 of 28.4 dBm (77.5 dBmV), an OIP2 of 65dBm (114 dBmV), and a noise figure of 5.8 dB, dissipating 125mW at 1.2V supply, and a core silicon area of 0.4mm2.
A broadband RF 65nm CMOS front-end for cable TV reception / Pifferi, Marco; Ducati, Fabio; H., Brekelmans; L., Tripodi; K., Doris; Borgarino, Mattia. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 39:5(2008), pp. 703-710. [10.1016/j.mejo.2007.12.027]
A broadband RF 65nm CMOS front-end for cable TV reception
PIFFERI, Marco;DUCATI, Fabio;BORGARINO, Mattia
2008
Abstract
A novel broadband RF front-end in 65nm CMOS technology is presented. The front-end serves to precondition the incoming RFspectrum for further processing in a cable TV receiver architecture where RF channel selection and down conversion are done in digitaldomain. The analog front-end consists of a broadband highly linear low-noise amplifier followed by a variable gain RF amplifier. An original broadband circuit topology for the amplifiers is adopted.The fabricated front-end exhibits a bandwidth of 50–1050 MHz, a variable gain, which spans from 12 to 37 dB with a 0.2 dB step, anOIP3 of 28.4 dBm (77.5 dBmV), an OIP2 of 65dBm (114 dBmV), and a noise figure of 5.8 dB, dissipating 125mW at 1.2V supply, and a core silicon area of 0.4mm2.Pubblicazioni consigliate
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