This letter reports a digital master-slave D-type register divide-by-512 frequency divider designed in a 0.35 μm Si/SiGe BiCMOS technology. The 600 x 1200 μm2 circuit operates up to 9.5 GHz dissipating 120 mW. Self-oscillations are avoided by the use of a radio frequency carrier detector that controls the bias of the last six registers. © 2008 IEEE.
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider / Ducati, F.; Pifferi, M.; Borgarino, M.. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - 18:7(2008), pp. 473-475. [10.1109/LMWC.2008.925114]
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider
Ducati F.;Borgarino M.
2008
Abstract
This letter reports a digital master-slave D-type register divide-by-512 frequency divider designed in a 0.35 μm Si/SiGe BiCMOS technology. The 600 x 1200 μm2 circuit operates up to 9.5 GHz dissipating 120 mW. Self-oscillations are avoided by the use of a radio frequency carrier detector that controls the bias of the last six registers. © 2008 IEEE.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
