The low frequency noise (LFN) properties of bipolar transistors are investigated in terms of equivalent input referred, partially correlated noise generators. These properties are studied as a function of the intrinsic noise sources and of the small-signal model topology. Topology invariance and identity properties are identified and their practical implications on the LFN modelling of bipolar transistors are assessed. (C) 2003 Elsevier Science Ltd. All rights reserved.
Topology investigation for the low frequency noise compact modelling of bipolar transistors / Borgarino, Mattia. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 47:(2003), pp. 791-796.
Topology investigation for the low frequency noise compact modelling of bipolar transistors
BORGARINO, Mattia
2003-01-01
Abstract
The low frequency noise (LFN) properties of bipolar transistors are investigated in terms of equivalent input referred, partially correlated noise generators. These properties are studied as a function of the intrinsic noise sources and of the small-signal model topology. Topology invariance and identity properties are identified and their practical implications on the LFN modelling of bipolar transistors are assessed. (C) 2003 Elsevier Science Ltd. All rights reserved.
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