An experimental setup, based on current/voltage conversion through transimpedance amplifiers (TAs), has been implemented for the direct full low-frequency noise (LFN) characterization of Si/SiGe heterojunction bipolar transistors (HBTs) in terms of base and collector short-circuit current noise sources. This setup performs a full characterization, as it measures simultaneously the two noise current sources and their correlation, thanks to an original technique based on the specific properties of a specially designed buffer amplifier using a low-noise common-base bipolar transistor (CB BJT). By means of translation formulae, the obtained measurements are compared with those carried out with a multi-impedance technique. They show a good agreement both for the noise sources spectral densities and for their correlation. The TA-based setup provides enhanced capabilities in terms of measurement speed and remote control potentialities.

Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs / L., Bary; Borgarino, Mattia; R., Plana; T., Parra; S., Kovacic; H., Lafontaine; J., Graffeuil. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 48:4(2001), pp. 767-773. [10.1109/16.915724]

Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs

BORGARINO, Mattia;
2001

Abstract

An experimental setup, based on current/voltage conversion through transimpedance amplifiers (TAs), has been implemented for the direct full low-frequency noise (LFN) characterization of Si/SiGe heterojunction bipolar transistors (HBTs) in terms of base and collector short-circuit current noise sources. This setup performs a full characterization, as it measures simultaneously the two noise current sources and their correlation, thanks to an original technique based on the specific properties of a specially designed buffer amplifier using a low-noise common-base bipolar transistor (CB BJT). By means of translation formulae, the obtained measurements are compared with those carried out with a multi-impedance technique. They show a good agreement both for the noise sources spectral densities and for their correlation. The TA-based setup provides enhanced capabilities in terms of measurement speed and remote control potentialities.
2001
48
4
767
773
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs / L., Bary; Borgarino, Mattia; R., Plana; T., Parra; S., Kovacic; H., Lafontaine; J., Graffeuil. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 48:4(2001), pp. 767-773. [10.1109/16.915724]
L., Bary; Borgarino, Mattia; R., Plana; T., Parra; S., Kovacic; H., Lafontaine; J., Graffeuil
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/448809
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