ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 4.324
EU - Europa 1.942
AS - Asia 919
AF - Africa 6
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
SA - Sud America 3
Totale 7.203
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Nazione #
US - Stati Uniti d'America 4.309
IT - Italia 699
GB - Regno Unito 386
SE - Svezia 299
SG - Singapore 283
CN - Cina 268
DE - Germania 181
HK - Hong Kong 149
FR - Francia 92
FI - Finlandia 72
ID - Indonesia 48
IN - India 47
BG - Bulgaria 39
KR - Corea 35
TW - Taiwan 31
NL - Olanda 30
IE - Irlanda 29
TR - Turchia 23
UA - Ucraina 23
JP - Giappone 17
CA - Canada 15
ES - Italia 14
PT - Portogallo 14
BE - Belgio 13
CH - Svizzera 9
RU - Federazione Russa 9
VN - Vietnam 7
GR - Grecia 6
LT - Lituania 6
PL - Polonia 6
AT - Austria 4
MY - Malesia 4
RO - Romania 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
DZ - Algeria 3
EU - Europa 3
IR - Iran 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BR - Brasile 2
LU - Lussemburgo 2
MK - Macedonia 2
TN - Tunisia 2
CZ - Repubblica Ceca 1
EG - Egitto 1
HR - Croazia 1
LA - Repubblica Popolare Democratica del Laos 1
NZ - Nuova Zelanda 1
PE - Perù 1
RS - Serbia 1
Totale 7.203
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Città #
Fairfield 663
Santa Clara 633
Chandler 343
Ashburn 342
Woodbridge 276
Houston 270
Southend 263
Singapore 240
Seattle 234
Cambridge 213
Nyköping 210
Wilmington 173
Hong Kong 136
Modena 124
Milan 104
Ann Arbor 95
San Diego 90
Chicago 66
Dearborn 65
Helsinki 60
London 51
Jacksonville 48
Boardman 47
Jakarta 47
Beijing 46
Princeton 43
Redwood City 41
Sofia 37
Grafing 36
Padova 35
Bremen 34
Bologna 29
New York 29
Guangzhou 26
Izmir 21
Taipei 21
Los Angeles 20
Parma 19
Dublin 18
Eugene 18
Falkenstein 14
Reggio Emilia 14
San Jose 14
Rome 13
Hefei 12
Frankfurt am Main 11
Munich 11
Reggio Nell'emilia 11
Shanghai 11
Bengaluru 10
Lappeenranta 10
Moscow 8
Novellara 8
Ravenna 8
Duncan 7
Kilburn 7
Nanjing 7
Ottawa 7
Tokyo 7
Xidian 7
Zurich 7
Cagliari 6
Falls Church 6
Formigine 6
Lafayette 6
Las Rozas de Madrid 6
Laveno-Mombello 6
Piacenza 6
Stuttgart 6
Toronto 6
Treviso 6
Turin 6
Amsterdam 5
Brussels 5
Busseto 5
Daegu 5
Gif-sur-yvette 5
Jinan 5
Kanpur 5
Montecchio Maggiore 5
Norwalk 5
Perugia 5
Warsaw 5
Xiamen 5
Xian 5
Aachen 4
Abano Terme 4
Acton 4
Assèmini 4
Bangalore 4
Cassino 4
Chennai 4
Cork 4
Des Moines 4
Dong Ket 4
Gwanak-gu 4
Hangyang 4
Hounslow 4
Leuven 4
Marseille 4
Totale 5.661
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Nome #
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 315
GaN-based power devices: Physics, reliability, and perspectives 275
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 272
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 264
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 247
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 227
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 217
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 211
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 206
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 200
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 198
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 192
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 191
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 188
Insights into the off-state breakdown mechanisms in power GaN HEMTs 185
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 183
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 181
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 179
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 176
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 175
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 175
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 174
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 167
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 166
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 157
A memory window expression to evaluate the endurance of ferroelectric FETs 154
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 145
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 142
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 139
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 135
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 129
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 119
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 117
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 112
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 102
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 77
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 77
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 76
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 72
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 71
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 70
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 52
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 45
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 43
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 41
Negative Capacitors and Applications 40
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 40
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 39
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 34
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 34
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 32
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 31
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 28
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 26
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 24
Physics of Phase Transition Switches 6
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 3
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 1
Totale 7.377
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Categoria #
all - tutte 35.792
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.792
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020622 0 0 0 0 0 161 133 85 128 46 51 18
2020/20211.608 78 40 105 92 97 137 181 132 161 187 131 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20251.287 180 44 36 207 472 348 0 0 0 0 0 0
Totale 7.377