ZAGNI, NICOLO'
 Distribuzione geografica
Continente #
NA - Nord America 3130
EU - Europa 1288
AS - Asia 213
AF - Africa 6
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 3
SA - Sud America 3
Totale 4648
Nazione #
US - Stati Uniti d'America 3122
IT - Italia 346
GB - Regno Unito 319
SE - Svezia 275
DE - Germania 125
CN - Cina 90
FR - Francia 76
BG - Bulgaria 39
IN - India 26
TW - Taiwan 25
TR - Turchia 23
UA - Ucraina 22
IE - Irlanda 20
NL - Olanda 17
JP - Giappone 15
KR - Corea 15
PT - Portogallo 14
CA - Canada 8
ES - Italia 7
FI - Finlandia 6
VN - Vietnam 6
HK - Hong Kong 5
AT - Austria 4
RO - Romania 4
BE - Belgio 3
DZ - Algeria 3
EU - Europa 3
IR - Iran 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
BR - Brasile 2
CH - Svizzera 2
LU - Lussemburgo 2
MK - Macedonia 2
MY - Malesia 2
PL - Polonia 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
EG - Egitto 1
GR - Grecia 1
HR - Croazia 1
LA - Repubblica Popolare Democratica del Laos 1
NZ - Nuova Zelanda 1
PE - Perù 1
RS - Serbia 1
SG - Singapore 1
Totale 4648
Città #
Fairfield 663
Chandler 293
Woodbridge 276
Houston 269
Southend 263
Ashburn 246
Seattle 233
Cambridge 212
Nyköping 189
Wilmington 173
Modena 107
Ann Arbor 95
San Diego 87
Dearborn 65
Jacksonville 48
Princeton 43
Redwood City 41
Sofia 37
Grafing 36
Bremen 34
Izmir 21
Taipei 21
Beijing 20
Eugene 18
London 18
Guangzhou 17
Hefei 12
Milan 12
Bologna 11
Padova 11
Reggio Nell'emilia 11
Dublin 9
Parma 9
Novellara 8
Duncan 7
Nanjing 7
Ottawa 7
Tokyo 7
Xidian 7
Falls Church 6
Lafayette 6
Piacenza 6
Ravenna 6
Stuttgart 6
Busseto 5
Gif-sur-yvette 5
Norwalk 5
Xian 5
Aachen 4
Abano Terme 4
Assèmini 4
Bangalore 4
Boardman 4
Chicago 4
Cork 4
Des Moines 4
Dong Ket 4
Hangyang 4
Helsinki 4
Jinan 4
Los Angeles 4
Messina 4
Montale 4
Prata Di Pordenone 4
Burjassot 3
Kunming 3
Montegaldella 3
Pavia 3
Rome 3
San Francisco 3
Seoul 3
Tempe 3
Albairate 2
Bristol 2
Cagliari 2
Central District 2
Cesena 2
Conselice 2
Correggio 2
Delhi 2
Downers Grove 2
Dresden 2
Freiberg 2
Fuzhou 2
Garden City 2
Gurgaon 2
Hanoi 2
Hebei 2
Hsinchu 2
Kesteren 2
Kundan 2
Melbourne 2
Oristano 2
Oxford 2
Plassac 2
Richmond 2
Saint Louis 2
San Mateo 2
Selargius 2
Seongnam 2
Totale 3837
Nome #
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 266
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 230
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 209
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 191
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 185
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 176
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 174
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 168
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 161
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 160
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 157
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 148
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 145
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 145
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 142
Insights into the off-state breakdown mechanisms in power GaN HEMTs 140
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 139
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 135
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 133
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 128
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 122
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 120
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 112
A memory window expression to evaluate the endurance of ferroelectric FETs 106
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 100
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 95
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 94
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 93
GaN-based power devices: Physics, reliability, and perspectives 93
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 81
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 75
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 69
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 69
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 56
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 46
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 42
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 38
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 20
Negative Capacitors and Applications 6
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 3
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 2
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 2
Totale 4776
Categoria #
all - tutte 9497
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9497


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201842 0000 00 032 4051
2018/2019261 8239 1212 122 12328473
2019/2020820 45161834 85161 13385 128465118
2020/20211608 784010592 97137 181132 161187131267
2021/20221261 1101005841 113207 5537 1148825187
2022/2023745 1261367881 144133 470 0000
Totale 4776