ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 8.009
AS - Asia 4.563
EU - Europa 3.058
SA - Sud America 497
Continente sconosciuto - Info sul continente non disponibili 206
AF - Africa 65
OC - Oceania 8
Totale 16.406
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Nazione #
US - Stati Uniti d'America 7.768
SG - Singapore 1.348
CN - Cina 1.282
IT - Italia 1.093
GB - Regno Unito 561
HK - Hong Kong 560
BR - Brasile 380
SE - Svezia 316
VN - Vietnam 309
KR - Corea 300
DE - Germania 284
FR - Francia 189
BD - Bangladesh 179
IN - India 133
CA - Canada 121
RU - Federazione Russa 120
FI - Finlandia 104
TW - Taiwan 104
JP - Giappone 79
NL - Olanda 73
ID - Indonesia 70
BG - Bulgaria 45
UA - Ucraina 42
MX - Messico 41
TR - Turchia 38
IE - Irlanda 35
AR - Argentina 34
ES - Italia 31
IQ - Iraq 28
PL - Polonia 25
CO - Colombia 23
AT - Austria 21
BE - Belgio 19
ZA - Sudafrica 18
CR - Costa Rica 16
EC - Ecuador 16
LT - Lituania 15
PT - Portogallo 15
AE - Emirati Arabi Uniti 14
UZ - Uzbekistan 14
CH - Svizzera 13
GR - Grecia 13
MY - Malesia 13
SA - Arabia Saudita 12
SV - El Salvador 12
MA - Marocco 11
VE - Venezuela 11
PK - Pakistan 10
TH - Thailandia 10
DK - Danimarca 9
JM - Giamaica 9
CL - Cile 8
DZ - Algeria 8
JO - Giordania 8
PE - Perù 8
PH - Filippine 8
AU - Australia 7
BO - Bolivia 7
HN - Honduras 7
NP - Nepal 6
RO - Romania 6
TT - Trinidad e Tobago 6
DO - Repubblica Dominicana 5
EE - Estonia 5
GP - Guadalupe 5
PY - Paraguay 5
AZ - Azerbaigian 4
EG - Egitto 4
GT - Guatemala 4
KZ - Kazakistan 4
MD - Moldavia 4
SN - Senegal 4
TN - Tunisia 4
UY - Uruguay 4
AL - Albania 3
BB - Barbados 3
BH - Bahrain 3
ET - Etiopia 3
EU - Europa 3
IL - Israele 3
IR - Iran 3
KE - Kenya 3
KW - Kuwait 3
LB - Libano 3
LU - Lussemburgo 3
MN - Mongolia 3
PR - Porto Rico 3
PS - Palestinian Territory 3
RS - Serbia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BS - Bahamas 2
BY - Bielorussia 2
CW - ???statistics.table.value.countryCode.CW??? 2
CZ - Repubblica Ceca 2
MK - Macedonia 2
NI - Nicaragua 2
OM - Oman 2
TJ - Tagikistan 2
AG - Antigua e Barbuda 1
Totale 16.183
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Città #
Ashburn 948
Singapore 892
Santa Clara 728
Fairfield 664
Hong Kong 518
San Jose 509
Hefei 438
Chandler 343
Council Bluffs 285
Houston 281
Woodbridge 276
Southend 263
Seattle 248
Cambridge 218
Nyköping 210
Chicago 187
Beijing 185
London 179
Wilmington 179
Milan 165
Seoul 165
Modena 160
Los Angeles 158
New York 103
Ho Chi Minh City 99
Ann Arbor 95
San Diego 91
The Dalles 90
Helsinki 84
Hanoi 72
Dearborn 65
Boardman 61
Buffalo 60
Dallas 54
Jacksonville 52
Jakarta 49
Bologna 47
Taipei 47
Princeton 45
Tokyo 44
Rome 42
Redwood City 41
Sofia 40
São Paulo 39
Moscow 38
Frankfurt am Main 37
Padova 37
Grafing 36
Kent 36
Bremen 34
Guangzhou 33
Lauterbourg 32
Shanghai 31
East Aurora 30
Reggio Emilia 28
Munich 25
Brooklyn 24
Falkenstein 24
Salt Lake City 24
Columbus 23
Dublin 23
Montreal 23
Parma 23
North Bergen 22
Saint Augustine 22
Toronto 22
Hsinchu 21
Izmir 21
Washington 21
Denver 20
Atlanta 19
Bengaluru 19
Chennai 19
Eugene 18
Hangzhou 18
Redondo Beach 18
Warsaw 18
Amsterdam 17
Orem 17
Charlotte 16
Da Nang 16
Dresden 16
Gangnam-gu 16
Formigine 15
Lappeenranta 15
Paris 15
Phoenix 15
San Francisco 15
Xi'an 15
Baghdad 14
Las Vegas 14
Manchester 14
Mexico City 14
Cheonan 13
Nuremberg 13
Philadelphia 13
Ravenna 13
Rio de Janeiro 13
Shenzhen 13
Shijiazhuang 13
Totale 10.693
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 667
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 614
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 433
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 419
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 400
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 377
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 375
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 368
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 361
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 352
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 339
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 339
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 338
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 336
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 335
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 334
A memory window expression to evaluate the endurance of ferroelectric FETs 333
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 328
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 324
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 323
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 320
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 318
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 312
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 312
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 289
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 287
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 271
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 271
Insights into the off-state breakdown mechanisms in power GaN HEMTs 267
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 255
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 254
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 250
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 246
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 245
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 211
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 209
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 209
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 201
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 200
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 196
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 194
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 193
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 188
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 185
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 181
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 176
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 169
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 166
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 162
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 155
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 154
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 154
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 153
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 148
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 146
Negative Capacitors and Applications 145
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 134
Physical Modelling of Charge Trapping Effects 127
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 123
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 120
Physics of Phase Transition Switches 113
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 76
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 66
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs 66
Dynamic $R_{\text{ON}}$ and $Q_{\text{OSS}}$ in P-GaN Power HEMTs Explained with the Hole Redistribution Model 51
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs 31
Device Design Implications on RON×QOSS FOM in p-GaN Power HEMTs: A Simulation Study 12
Totale 16.406
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Categoria #
all - tutte 64.833
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 64.833
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022993 0 0 0 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20253.034 180 44 36 207 472 423 213 205 264 144 452 394
2025/20265.536 426 357 343 513 750 395 615 281 585 567 403 301
2026/20271.746 255 379 417 695 0 0 0 0 0 0 0 0
Totale 16.406