ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 6.538
AS - Asia 4.439
EU - Europa 2.914
SA - Sud America 477
AF - Africa 65
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
Totale 14.447
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Nazione #
US - Stati Uniti d'America 6.395
SG - Singapore 1.327
CN - Cina 1.254
IT - Italia 1.007
HK - Hong Kong 552
GB - Regno Unito 546
BR - Brasile 370
SE - Svezia 316
VN - Vietnam 309
KR - Corea 295
DE - Germania 279
FR - Francia 175
BD - Bangladesh 143
IN - India 127
RU - Federazione Russa 119
FI - Finlandia 104
TW - Taiwan 98
CA - Canada 80
JP - Giappone 75
NL - Olanda 72
ID - Indonesia 67
BG - Bulgaria 45
MX - Messico 39
UA - Ucraina 39
TR - Turchia 38
IE - Irlanda 34
AR - Argentina 32
IQ - Iraq 28
ES - Italia 27
PL - Polonia 24
AT - Austria 21
CO - Colombia 19
ZA - Sudafrica 18
EC - Ecuador 15
LT - Lituania 15
PT - Portogallo 15
AE - Emirati Arabi Uniti 14
BE - Belgio 14
UZ - Uzbekistan 14
GR - Grecia 13
CH - Svizzera 12
SA - Arabia Saudita 12
MA - Marocco 11
MY - Malesia 10
PK - Pakistan 10
TH - Thailandia 9
VE - Venezuela 9
CL - Cile 8
DZ - Algeria 8
JO - Giordania 8
PE - Perù 8
AU - Australia 7
DK - Danimarca 7
PH - Filippine 7
BO - Bolivia 6
CR - Costa Rica 6
NP - Nepal 6
RO - Romania 6
DO - Repubblica Dominicana 5
PY - Paraguay 5
AZ - Azerbaigian 4
EG - Egitto 4
KZ - Kazakistan 4
MD - Moldavia 4
SN - Senegal 4
TN - Tunisia 4
UY - Uruguay 4
AL - Albania 3
BH - Bahrain 3
ET - Etiopia 3
EU - Europa 3
IR - Iran 3
JM - Giamaica 3
KE - Kenya 3
KW - Kuwait 3
LB - Libano 3
LU - Lussemburgo 3
MN - Mongolia 3
PS - Palestinian Territory 3
RS - Serbia 3
SV - El Salvador 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BY - Bielorussia 2
CZ - Repubblica Ceca 2
HN - Honduras 2
MK - Macedonia 2
OM - Oman 2
TJ - Tagikistan 2
TT - Trinidad e Tobago 2
BB - Barbados 1
BN - Brunei Darussalam 1
CG - Congo 1
CI - Costa d'Avorio 1
EE - Estonia 1
GA - Gabon 1
GE - Georgia 1
GH - Ghana 1
GT - Guatemala 1
GY - Guiana 1
Totale 14.432
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Città #
Singapore 881
Santa Clara 695
Ashburn 677
Fairfield 663
Hong Kong 514
Hefei 438
San Jose 386
Chandler 343
Houston 278
Woodbridge 276
Southend 263
Seattle 243
Cambridge 215
Nyköping 210
Beijing 178
London 178
Wilmington 178
Chicago 176
Seoul 165
Modena 157
Milan 155
Los Angeles 125
Ho Chi Minh City 99
Ann Arbor 95
Council Bluffs 92
San Diego 90
The Dalles 89
New York 86
Helsinki 84
Hanoi 72
Dearborn 65
Boardman 61
Buffalo 51
Jacksonville 49
Jakarta 49
Taipei 47
Bologna 44
Princeton 43
Dallas 41
Redwood City 41
Tokyo 41
Sofia 40
Moscow 38
Frankfurt am Main 37
Padova 37
Grafing 36
Kent 36
Bremen 34
São Paulo 34
Guangzhou 33
Lauterbourg 32
East Aurora 30
Shanghai 29
Reggio Emilia 27
Rome 27
Munich 25
Falkenstein 24
Dublin 23
Parma 23
Salt Lake City 23
Hsinchu 21
Izmir 21
Brooklyn 20
Chennai 19
Denver 18
Eugene 18
Warsaw 18
Amsterdam 17
Hangzhou 17
Montreal 17
Orem 17
Redondo Beach 17
Toronto 17
Bengaluru 16
Da Nang 16
Dresden 16
Columbus 15
Formigine 15
Gangnam-gu 15
Lappeenranta 15
Baghdad 14
Manchester 14
Paris 14
Cheonan 13
Mexico City 13
Nuremberg 13
Rio de Janeiro 13
Shenzhen 13
Shijiazhuang 13
Tashkent 13
Xi'an 13
Mapo-gu 12
Wallingford 12
Elk Grove Village 11
Reggio Nell'emilia 11
Washington 11
Atlanta 10
Brantford 10
Des Moines 10
Nanjing 10
Totale 9.809
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 585
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 500
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 407
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 391
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 370
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 355
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 351
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 327
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 323
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 319
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 311
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 309
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 308
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 305
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 304
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 304
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 303
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 302
A memory window expression to evaluate the endurance of ferroelectric FETs 302
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 298
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 292
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 290
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 287
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 287
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 271
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 265
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 256
Insights into the off-state breakdown mechanisms in power GaN HEMTs 255
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 240
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 239
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 233
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 230
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 222
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 221
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 187
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 184
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 184
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 180
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 175
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 174
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 173
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 168
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 163
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 160
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 160
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 157
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 150
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 142
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 142
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 140
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 139
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 134
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 128
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 127
Negative Capacitors and Applications 126
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 123
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 117
Physical Modelling of Charge Trapping Effects 115
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 105
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 104
Physics of Phase Transition Switches 99
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 47
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 36
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs 18
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs 14
Dynamic $R_{\text{ON}}$ and $Q_{\text{OSS}}$ in P-GaN Power HEMTs Explained with the Hole Redistribution Model 11
Totale 14.644
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Categoria #
all - tutte 57.762
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.762
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021267 0 0 0 0 0 0 0 0 0 0 0 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20253.034 180 44 36 207 472 423 213 205 264 144 452 394
2025/20265.520 426 357 343 513 750 395 615 281 585 567 403 285
Totale 14.644