ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 5.462
AS - Asia 3.226
EU - Europa 2.618
SA - Sud America 370
AF - Africa 37
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 6
Totale 11.726
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Nazione #
US - Stati Uniti d'America 5.396
SG - Singapore 1.020
CN - Cina 1.016
IT - Italia 858
GB - Regno Unito 536
HK - Hong Kong 471
SE - Svezia 314
BR - Brasile 305
DE - Germania 254
KR - Corea 215
VN - Vietnam 141
FR - Francia 132
RU - Federazione Russa 114
FI - Finlandia 83
IN - India 82
TW - Taiwan 74
NL - Olanda 67
ID - Indonesia 59
BG - Bulgaria 41
JP - Giappone 41
CA - Canada 40
UA - Ucraina 34
IE - Irlanda 32
TR - Turchia 29
ES - Italia 24
AR - Argentina 21
AT - Austria 19
PL - Polonia 19
MX - Messico 16
BE - Belgio 14
LT - Lituania 14
PT - Portogallo 14
EC - Ecuador 13
GR - Grecia 13
BD - Bangladesh 12
ZA - Sudafrica 12
CH - Svizzera 11
SA - Arabia Saudita 11
CO - Colombia 10
IQ - Iraq 10
UZ - Uzbekistan 7
VE - Venezuela 7
AU - Australia 6
DZ - Algeria 6
RO - Romania 6
AE - Emirati Arabi Uniti 5
DK - Danimarca 5
MY - Malesia 5
PE - Perù 5
CL - Cile 4
MA - Marocco 4
PK - Pakistan 4
PY - Paraguay 4
SN - Senegal 4
CR - Costa Rica 3
EG - Egitto 3
EU - Europa 3
IR - Iran 3
JO - Giordania 3
LU - Lussemburgo 3
PH - Filippine 3
RS - Serbia 3
TH - Thailandia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
DO - Repubblica Dominicana 2
HN - Honduras 2
JM - Giamaica 2
KW - Kuwait 2
KZ - Kazakistan 2
MK - Macedonia 2
TN - Tunisia 2
AL - Albania 1
AO - Angola 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
CZ - Repubblica Ceca 1
ET - Etiopia 1
HR - Croazia 1
HU - Ungheria 1
KE - Kenya 1
KY - Cayman, isole 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 11.726
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Città #
Singapore 676
Fairfield 663
Santa Clara 646
Ashburn 499
Hefei 438
Hong Kong 437
Chandler 343
Houston 277
Woodbridge 276
Southend 263
Seattle 239
Cambridge 215
Nyköping 210
Wilmington 178
London 177
Modena 144
Milan 128
Chicago 122
Beijing 111
Seoul 106
Los Angeles 96
Ann Arbor 95
San Diego 90
Helsinki 66
Dearborn 65
Council Bluffs 58
Boardman 55
New York 54
Ho Chi Minh City 53
The Dalles 50
Jakarta 49
Jacksonville 48
Princeton 43
Buffalo 41
Redwood City 41
Bologna 40
Sofia 39
Taipei 38
Moscow 37
Padova 37
Grafing 36
Dallas 35
Kent 35
Bremen 34
São Paulo 31
East Aurora 30
Guangzhou 30
Hanoi 29
San Jose 28
Tokyo 28
Shanghai 26
Munich 25
Reggio Emilia 25
Falkenstein 23
Frankfurt am Main 23
Salt Lake City 22
Dublin 21
Izmir 21
Parma 21
Rome 20
Brooklyn 18
Eugene 18
Hsinchu 18
Denver 17
Redondo Beach 17
Warsaw 17
Dresden 16
Montreal 16
Formigine 15
Amsterdam 14
Columbus 14
Cheonan 13
Lappeenranta 13
Bengaluru 12
Chennai 12
Gangnam-gu 12
Mapo-gu 12
Nuremberg 12
Xi'an 12
Elk Grove Village 11
Manchester 11
Reggio Nell'emilia 11
Toronto 11
Paris 10
Rio de Janeiro 10
Shenzhen 10
Atlanta 9
Des Moines 9
Piacenza 9
Yuseong-gu 9
Zurich 9
Nanjing 8
Novellara 8
Phoenix 8
Ravenna 8
Songpa-gu 8
Tampa 8
Turin 8
Vienna 8
Bari 7
Totale 8.254
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 494
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 376
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 356
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 349
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 336
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 330
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 312
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 298
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 296
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 276
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 274
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 260
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 257
A memory window expression to evaluate the endurance of ferroelectric FETs 257
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 253
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 251
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 251
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 249
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 248
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 242
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 241
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 241
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 238
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 234
Insights into the off-state breakdown mechanisms in power GaN HEMTs 230
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 229
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 217
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 213
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 210
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 203
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 203
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 194
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 188
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 177
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 158
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 146
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 145
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 143
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 141
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 140
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 130
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 128
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 121
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 117
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 114
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 114
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 114
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 112
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 111
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 109
Negative Capacitors and Applications 108
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 107
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 101
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 99
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 96
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 85
Physical Modelling of Charge Trapping Effects 75
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 74
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 73
Physics of Phase Transition Switches 60
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 9
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 4
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 2
Totale 11.919
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Categoria #
all - tutte 50.827
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.827
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.059 0 0 0 0 0 0 181 132 161 187 131 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20253.034 180 44 36 207 472 423 213 205 264 144 452 394
2025/20262.795 426 357 343 513 750 395 11 0 0 0 0 0
Totale 11.919