ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 5.300
AS - Asia 3.093
EU - Europa 2.606
SA - Sud America 360
AF - Africa 33
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 6
Totale 11.405
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Nazione #
US - Stati Uniti d'America 5.240
CN - Cina 983
SG - Singapore 959
IT - Italia 851
GB - Regno Unito 535
HK - Hong Kong 464
SE - Svezia 314
BR - Brasile 300
DE - Germania 254
KR - Corea 213
FR - Francia 132
VN - Vietnam 131
RU - Federazione Russa 114
FI - Finlandia 82
IN - India 80
NL - Olanda 66
TW - Taiwan 60
ID - Indonesia 59
BG - Bulgaria 41
JP - Giappone 38
CA - Canada 37
UA - Ucraina 34
IE - Irlanda 32
TR - Turchia 29
ES - Italia 23
AR - Argentina 20
AT - Austria 19
PL - Polonia 19
MX - Messico 15
BE - Belgio 14
PT - Portogallo 14
EC - Ecuador 13
GR - Grecia 13
LT - Lituania 13
BD - Bangladesh 12
CH - Svizzera 11
SA - Arabia Saudita 11
ZA - Sudafrica 11
IQ - Iraq 10
CO - Colombia 9
UZ - Uzbekistan 7
AU - Australia 6
DZ - Algeria 6
RO - Romania 6
AE - Emirati Arabi Uniti 5
DK - Danimarca 5
MY - Malesia 5
PE - Perù 5
VE - Venezuela 5
MA - Marocco 4
PK - Pakistan 4
PY - Paraguay 4
CL - Cile 3
EG - Egitto 3
EU - Europa 3
IR - Iran 3
JO - Giordania 3
LU - Lussemburgo 3
PH - Filippine 3
RS - Serbia 3
SN - Senegal 3
TH - Thailandia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
HN - Honduras 2
JM - Giamaica 2
KW - Kuwait 2
KZ - Kazakistan 2
MK - Macedonia 2
TN - Tunisia 2
AL - Albania 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
CZ - Repubblica Ceca 1
HR - Croazia 1
HU - Ungheria 1
KE - Kenya 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 11.405
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Città #
Fairfield 663
Santa Clara 645
Singapore 641
Ashburn 481
Hefei 438
Hong Kong 436
Chandler 343
Woodbridge 276
Houston 274
Southend 263
Seattle 239
Cambridge 215
Nyköping 210
Wilmington 178
London 177
Modena 143
Milan 128
Beijing 109
Chicago 106
Seoul 106
Ann Arbor 95
Los Angeles 91
San Diego 90
Helsinki 66
Dearborn 65
Boardman 55
Council Bluffs 54
New York 51
Ho Chi Minh City 49
Jakarta 49
Jacksonville 48
Princeton 43
Buffalo 41
Redwood City 41
Sofia 39
The Dalles 38
Bologna 37
Moscow 37
Padova 37
Grafing 36
Kent 35
Bremen 34
Dallas 34
Taipei 31
East Aurora 30
São Paulo 30
Guangzhou 29
Hanoi 29
Munich 25
Reggio Emilia 25
Shanghai 25
Tokyo 25
Falkenstein 23
Frankfurt am Main 23
Dublin 21
Izmir 21
Parma 21
Salt Lake City 19
Eugene 18
Brooklyn 17
Redondo Beach 17
Rome 17
San Jose 17
Warsaw 17
Dresden 16
Formigine 15
Denver 14
Hsinchu 14
Amsterdam 13
Cheonan 13
Columbus 13
Montreal 13
Bengaluru 12
Lappeenranta 12
Mapo-gu 12
Nuremberg 12
Chennai 11
Reggio Nell'emilia 11
Toronto 11
Gangnam-gu 10
Manchester 10
Paris 10
Rio de Janeiro 10
Shenzhen 10
Elk Grove Village 9
Piacenza 9
Yuseong-gu 9
Zurich 9
Atlanta 8
Des Moines 8
Novellara 8
Ravenna 8
Songpa-gu 8
Turin 8
Vienna 8
Bari 7
Buk-gu 7
Delft 7
Duncan 7
Kilburn 7
Totale 8.085
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 486
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 373
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 339
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 327
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 323
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 321
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 303
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 291
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 284
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 269
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 267
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 257
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 251
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 250
A memory window expression to evaluate the endurance of ferroelectric FETs 248
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 246
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 246
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 245
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 242
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 239
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 237
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 236
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 233
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 232
Insights into the off-state breakdown mechanisms in power GaN HEMTs 229
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 228
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 212
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 208
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 208
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 201
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 196
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 190
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 179
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 174
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 152
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 140
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 139
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 138
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 137
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 136
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 127
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 123
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 118
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 115
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 112
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 112
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 110
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 109
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 107
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 107
Negative Capacitors and Applications 106
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 102
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 98
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 95
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 90
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 79
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 72
Physical Modelling of Charge Trapping Effects 71
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 71
Physics of Phase Transition Switches 58
Totale 11.594
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Categoria #
all - tutte 49.785
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.785
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.196 0 0 0 0 0 137 181 132 161 187 131 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20253.034 180 44 36 207 472 423 213 205 264 144 452 394
2025/20262.470 426 357 343 513 750 81 0 0 0 0 0 0
Totale 11.594