ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 3.657
EU - Europa 1.789
AS - Asia 673
AF - Africa 6
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
SA - Sud America 3
Totale 6.137
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Nazione #
US - Stati Uniti d'America 3.643
IT - Italia 632
GB - Regno Unito 382
SE - Svezia 299
CN - Cina 189
DE - Germania 162
SG - Singapore 153
HK - Hong Kong 146
FR - Francia 92
IN - India 47
BG - Bulgaria 39
FI - Finlandia 38
KR - Corea 32
TW - Taiwan 28
IE - Irlanda 27
NL - Olanda 25
TR - Turchia 23
UA - Ucraina 23
ID - Indonesia 22
JP - Giappone 17
CA - Canada 14
PT - Portogallo 14
ES - Italia 13
BE - Belgio 9
GR - Grecia 6
PL - Polonia 6
VN - Vietnam 6
AT - Austria 4
LT - Lituania 4
MY - Malesia 4
RO - Romania 4
AU - Australia 3
DZ - Algeria 3
EU - Europa 3
IR - Iran 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AE - Emirati Arabi Uniti 2
BR - Brasile 2
CH - Svizzera 2
LU - Lussemburgo 2
MK - Macedonia 2
TN - Tunisia 2
CZ - Repubblica Ceca 1
EG - Egitto 1
HR - Croazia 1
LA - Repubblica Popolare Democratica del Laos 1
NZ - Nuova Zelanda 1
PE - Perù 1
RS - Serbia 1
RU - Federazione Russa 1
Totale 6.137
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Città #
Fairfield 663
Chandler 343
Ashburn 339
Woodbridge 276
Houston 270
Southend 263
Seattle 234
Cambridge 213
Nyköping 210
Wilmington 173
Hong Kong 135
Modena 119
Singapore 116
Ann Arbor 95
San Diego 90
Milan 83
Chicago 66
Dearborn 65
London 49
Jacksonville 48
Boardman 47
Beijing 45
Princeton 43
Redwood City 41
Sofia 37
Grafing 36
Padova 35
Bremen 34
Helsinki 29
New York 29
Bologna 24
Guangzhou 23
Jakarta 22
Izmir 21
Taipei 21
Los Angeles 20
Parma 19
Eugene 18
Dublin 16
San Jose 14
Rome 13
Hefei 12
Reggio Nell'emilia 11
Bengaluru 10
Frankfurt am Main 10
Shanghai 10
Novellara 8
Ravenna 8
Reggio Emilia 8
Duncan 7
Kilburn 7
Lappeenranta 7
Munich 7
Nanjing 7
Ottawa 7
Tokyo 7
Xidian 7
Cagliari 6
Falls Church 6
Lafayette 6
Las Rozas de Madrid 6
Laveno-Mombello 6
Piacenza 6
Stuttgart 6
Treviso 6
Turin 6
Busseto 5
Daegu 5
Gif-sur-yvette 5
Kanpur 5
Norwalk 5
Perugia 5
Toronto 5
Warsaw 5
Xiamen 5
Xian 5
Aachen 4
Abano Terme 4
Acton 4
Assèmini 4
Bangalore 4
Cassino 4
Chennai 4
Cork 4
Des Moines 4
Dong Ket 4
Formigine 4
Gwanak-gu 4
Hangyang 4
Hounslow 4
Jinan 4
Leuven 4
Marseille 4
Messina 4
Montale 4
Paris 4
Prata Di Pordenone 4
Santa Clara 4
Seoul 4
Vicenza 4
Totale 4.770
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Nome #
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 296
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 254
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 245
GaN-based power devices: Physics, reliability, and perspectives 230
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 220
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 212
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 200
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 196
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 190
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 183
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 179
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 176
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 175
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 173
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 167
Insights into the off-state breakdown mechanisms in power GaN HEMTs 167
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 164
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 161
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 158
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 157
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 157
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 156
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 152
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 142
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 135
A memory window expression to evaluate the endurance of ferroelectric FETs 130
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 124
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 119
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 117
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 115
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 115
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 98
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 96
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 95
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 87
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 61
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 61
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 58
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 55
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 49
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 43
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 35
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 29
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 26
Negative Capacitors and Applications 23
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 23
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 21
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 17
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 16
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 15
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 14
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 9
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 6
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 3
Totale 6.305
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Categoria #
all - tutte 31.355
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.355
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020775 0 16 18 34 85 161 133 85 128 46 51 18
2020/20211.608 78 40 105 92 97 137 181 132 161 187 131 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/2025215 180 35 0 0 0 0 0 0 0 0 0 0
Totale 6.305