ZAGNI, NICOLO'
 Distribuzione geografica
Continente #
NA - Nord America 2310
AS - Asia 1034
EU - Europa 868
AF - Africa 25
OC - Oceania 10
SA - Sud America 9
Totale 4256
Nazione #
US - Stati Uniti d'America 2249
IT - Italia 301
IN - India 249
CN - Cina 244
TW - Taiwan 164
JP - Giappone 114
FR - Francia 90
DE - Germania 86
GB - Regno Unito 81
KR - Corea 71
CA - Canada 59
HK - Hong Kong 58
SE - Svezia 49
SG - Singapore 42
BE - Belgio 40
CZ - Repubblica Ceca 40
IE - Irlanda 38
NL - Olanda 31
AT - Austria 22
MY - Malesia 22
RU - Federazione Russa 18
DZ - Algeria 17
IR - Iran 13
CH - Svizzera 10
UA - Ucraina 10
AU - Australia 9
ES - Italia 9
GR - Grecia 9
VN - Vietnam 9
ID - Indonesia 8
BD - Bangladesh 7
LK - Sri Lanka 7
RO - Romania 7
TR - Turchia 7
FI - Finlandia 6
ZA - Sudafrica 6
LT - Lituania 5
IL - Israele 4
IQ - Iraq 4
BR - Brasile 3
CL - Cile 3
TH - Thailandia 3
BG - Bulgaria 2
BY - Bielorussia 2
MA - Marocco 2
MO - Macao, regione amministrativa speciale della Cina 2
MX - Messico 2
PL - Polonia 2
PT - Portogallo 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
DK - Danimarca 1
HU - Ungheria 1
JO - Giordania 1
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
RS - Serbia 1
Totale 4256
Città #
Fairfield 335
Houston 257
Santa Cruz 176
Ann Arbor 149
Taipei 120
Woodbridge 108
Ashburn 100
Cambridge 100
San Diego 84
Seattle 80
Wilmington 74
Des Moines 60
Beijing 59
Lafayette 51
Duncan 40
Padova 38
Dublin 37
Bengaluru 36
Modena 35
Stockholm 34
Seoul 32
Buffalo 31
Ottawa 31
Milan 30
Xian 28
Singapore 26
Council Bluffs 23
Bremen 21
Gif-sur-yvette 21
West Lafayette 21
Central District 20
San Jose 20
Shenzhen 20
Tokyo 19
Delhi 17
Central 16
Hyderabad 16
Mumbai 15
Toronto 15
Guangzhou 14
Kolkata 14
Nanjing 14
Leuven 13
Heverlee 12
Osaka 11
Bangalore 10
Los Angeles 10
Mountain View 10
Shanghai 10
Bristol 9
Dalian 9
Visakhapatnam 9
Bayan Lepas 8
Chengdu 8
Chicago 8
Makuharihongo 8
Nagoya 8
New Delhi 8
Bordeaux 7
Boulder 7
Dhaka 7
Gurgaon 7
Jakarta 7
Jinan 7
Kozhikode 7
London 7
Pune 7
Rome 7
Saint Petersburg 7
Southend 7
Tianjin 7
Villach 7
Amsterdam 6
Bhubaneswar 6
Boston 6
Brussels 6
Hsinchu 6
Aachen 5
Hefei 5
Kanpur 5
Menlo Park 5
Miami 5
Montegaldella 5
Piacenza 5
Provo 5
Udine 5
Ankara 4
Arvada 4
Atlanta 4
Bhopal 4
Boardman 4
Brescia 4
Burnaby 4
Correggio 4
Dong Ket 4
Dresden 4
Florissant 4
Henderson 4
Muizenberg 4
Palo Alto 4
Totale 2817
Nome #
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo, file e31e124f-7259-987f-e053-3705fe0a095a 484
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, file e31e124e-b611-987f-e053-3705fe0a095a 437
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs, file e31e124f-c2d7-987f-e053-3705fe0a095a 320
A memory window expression to evaluate the endurance of ferroelectric FETs, file e31e124e-9883-987f-e053-3705fe0a095a 300
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates, file e31e124d-e2a6-987f-e053-3705fe0a095a 295
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach, file e31e124f-a096-987f-e053-3705fe0a095a 261
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs, file e31e124f-8157-987f-e053-3705fe0a095a 250
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs, file e31e124e-9f7a-987f-e053-3705fe0a095a 230
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs, file e31e124e-5629-987f-e053-3705fe0a095a 208
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs, file e31e124f-9855-987f-e053-3705fe0a095a 208
Insights into the off-state breakdown mechanisms in power GaN HEMTs, file e31e124f-c08c-987f-e053-3705fe0a095a 146
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs, file e31e124f-2683-987f-e053-3705fe0a095a 145
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs, file e31e124f-a9f8-987f-e053-3705fe0a095a 121
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs, file e31e124e-90f6-987f-e053-3705fe0a095a 119
GaN-based power devices: Physics, reliability, and perspectives, file e31e124f-b78c-987f-e053-3705fe0a095a 118
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity, file e31e124f-9e94-987f-e053-3705fe0a095a 115
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry, file e31e124f-9f55-987f-e053-3705fe0a095a 107
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs, file e31e124f-c49f-987f-e053-3705fe0a095a 98
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs, file e31e124f-c658-987f-e053-3705fe0a095a 97
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e31e124f-c8a7-987f-e053-3705fe0a095a 87
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design, file e31e124f-48f9-987f-e053-3705fe0a095a 84
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors, file e31e124f-a6dd-987f-e053-3705fe0a095a 83
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs, file e31e124f-9c3a-987f-e053-3705fe0a095a 78
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective, file e31e124f-f407-987f-e053-3705fe0a095a 8
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs, file e31e124f-91d2-987f-e053-3705fe0a095a 4
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications, file d9ceddae-284f-4a83-904a-1d8f5352ce85 2
Totale 4405
Categoria #
all - tutte 6550
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6550


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201 0000 01 00 0000
2020/20211083 004881 1187 17959 98134124262
2021/20222233 134127172321 271180 145142 191133292125
2022/20231088 98127227163 137184 1520 0000
Totale 4405