ZAGNI, NICOLO'
 Distribuzione geografica
Continente #
NA - Nord America 2.666
AS - Asia 1.721
EU - Europa 1.477
AF - Africa 50
OC - Oceania 12
SA - Sud America 12
Totale 5.938
Nazione #
US - Stati Uniti d'America 2.589
IT - Italia 551
IN - India 427
CN - Cina 320
TW - Taiwan 265
JP - Giappone 187
FR - Francia 149
DE - Germania 143
KR - Corea 120
SE - Svezia 118
HK - Hong Kong 117
GB - Regno Unito 99
NL - Olanda 91
CA - Canada 74
SG - Singapore 64
BE - Belgio 59
IR - Iran 58
CZ - Repubblica Ceca 44
BD - Bangladesh 42
IE - Irlanda 38
MY - Malesia 38
AT - Austria 34
DZ - Algeria 32
UA - Ucraina 23
CH - Svizzera 22
RU - Federazione Russa 21
ES - Italia 15
FI - Finlandia 12
GR - Grecia 12
AU - Australia 11
TR - Turchia 11
RO - Romania 10
HU - Ungheria 9
VN - Vietnam 9
ID - Indonesia 8
LK - Sri Lanka 8
IL - Israele 7
JO - Giordania 7
AE - Emirati Arabi Uniti 6
ZA - Sudafrica 6
EG - Egitto 5
IQ - Iraq 5
LT - Lituania 5
PK - Pakistan 5
PT - Portogallo 5
TH - Thailandia 5
MO - Macao, regione amministrativa speciale della Cina 4
VE - Venezuela 4
BR - Brasile 3
BY - Bielorussia 3
CL - Cile 3
GH - Ghana 3
MX - Messico 3
PL - Polonia 3
SA - Arabia Saudita 3
AR - Argentina 2
BG - Bulgaria 2
DK - Danimarca 2
MA - Marocco 2
PH - Filippine 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
UZ - Uzbekistan 2
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
NG - Nigeria 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
TN - Tunisia 1
Totale 5.938
Città #
Fairfield 335
Houston 259
Santa Cruz 176
Ashburn 163
Ann Arbor 149
Taipei 140
Woodbridge 108
Cambridge 102
Stockholm 97
San Diego 92
Milan 85
Seattle 85
Wilmington 74
Beijing 60
Des Moines 60
Modena 57
Lafayette 51
Central 50
Padova 47
Bengaluru 41
Duncan 40
Tehran 40
Dublin 37
Tokyo 37
Seoul 36
Boardman 34
Dhaka 34
Buffalo 33
Council Bluffs 31
Ottawa 31
Singapore 29
West Lafayette 29
Delhi 28
Roermond 28
San Jose 28
Xian 28
Hyderabad 27
Hsinchu 25
Chennai 23
Kaohsiung City 23
Kolkata 23
Guangzhou 22
Osaka 22
Shenzhen 22
Bremen 21
Gif-sur-yvette 21
Central District 20
Chicago 20
Mumbai 20
Leuven 19
New Delhi 19
Toronto 19
Atlanta 16
Los Angeles 16
Parma 16
Heverlee 15
Shanghai 15
Bologna 14
Hangzhou 14
Nanjing 14
Villach 14
Elk Grove Village 12
Kanpur 12
Lucknow 12
Paris 12
Coimbatore 11
Fleming Island 11
London 11
Mountain View 11
Roorkee 11
Bangalore 10
Bhubaneswar 10
Brussels 10
Kozhikode 10
Rome 10
Santa Barbara 10
Tainan City 10
Ube 10
Bristol 9
Dalian 9
Ferrara 9
Frankfurt am Main 9
New Taipei 9
Richardson 9
Turin 9
Visakhapatnam 9
Bayan Lepas 8
Bordeaux 8
Chengdu 8
George Town 8
Gurgaon 8
Makuharihongo 8
Nagoya 8
Pune 8
San Francisco 8
Amman 7
Amsterdam 7
Ankara 7
Boulder 7
Dresden 7
Totale 3.596
Nome #
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo, file e31e124f-7259-987f-e053-3705fe0a095a 872
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, file e31e124e-b611-987f-e053-3705fe0a095a 499
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs, file e31e124f-c2d7-987f-e053-3705fe0a095a 436
A memory window expression to evaluate the endurance of ferroelectric FETs, file e31e124e-9883-987f-e053-3705fe0a095a 339
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs, file e31e124e-5629-987f-e053-3705fe0a095a 333
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates, file e31e124d-e2a6-987f-e053-3705fe0a095a 329
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach, file e31e124f-a096-987f-e053-3705fe0a095a 302
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs, file e31e124f-8157-987f-e053-3705fe0a095a 275
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs, file e31e124f-2683-987f-e053-3705fe0a095a 249
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs, file e31e124e-9f7a-987f-e053-3705fe0a095a 245
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs, file e31e124f-9855-987f-e053-3705fe0a095a 236
Insights into the off-state breakdown mechanisms in power GaN HEMTs, file e31e124f-c08c-987f-e053-3705fe0a095a 212
GaN-based power devices: Physics, reliability, and perspectives, file e31e124f-b78c-987f-e053-3705fe0a095a 171
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity, file e31e124f-9e94-987f-e053-3705fe0a095a 153
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry, file e31e124f-9f55-987f-e053-3705fe0a095a 153
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design, file e31e124f-48f9-987f-e053-3705fe0a095a 147
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs, file e31e124e-90f6-987f-e053-3705fe0a095a 145
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs, file e31e124f-a9f8-987f-e053-3705fe0a095a 140
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs, file e31e124f-c658-987f-e053-3705fe0a095a 123
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e31e124f-c8a7-987f-e053-3705fe0a095a 120
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs, file e31e124f-c49f-987f-e053-3705fe0a095a 116
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors, file e31e124f-a6dd-987f-e053-3705fe0a095a 114
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs, file e31e124f-9c3a-987f-e053-3705fe0a095a 94
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective, file e31e124f-f407-987f-e053-3705fe0a095a 93
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges, file bea511c5-6fbd-44b2-83a4-f97097aa8b92 84
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs, file e31e124f-91d2-987f-e053-3705fe0a095a 43
GaN-based power devices: Physics, reliability, and perspectives, file 6dbdc7f3-fdb2-4bcb-9d04-dd1978d7f13e 26
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications, file d9ceddae-284f-4a83-904a-1d8f5352ce85 15
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors, file 439d3b3e-fa3d-44aa-99d8-eaa98307bacf 10
Gate-Bias Induced RON Instability in p-GaN Power HEMTs, file 1ad44d5f-fca6-4f92-a132-0a8305f39de2 9
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability, file ad576623-bf94-4a18-a901-d20a428a90c4 4
Totale 6.087
Categoria #
all - tutte 13.988
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.988


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201 0 0 0 0 0 1 0 0 0 0 0 0
2020/20211.083 0 0 48 81 11 87 179 59 98 134 124 262
2021/20222.233 134 127 172 321 271 180 145 142 191 133 292 125
2022/20231.979 98 127 227 163 137 184 161 162 221 201 180 118
2023/2024791 173 183 138 46 52 50 45 78 26 0 0 0
Totale 6.087