GaN-based devices are getting more common in the power electronics market thanks also to the improvements obtained in their stability and reliability. Further development of the technology in terms of either lateral p-GaN HEMT for low (100-V) to medium (650-V) voltage range or vertical GaN MOSFET for high (>1000-V) voltage range requires the careful assessment and modeling of the physical mechanisms leading to recoverable and permanent degradation. In this paper, a selection of the key stability/reliability issues are discussed for both lateral GaN HEMTs and vertical GaN MOSCAPs and Trench MOSFETs.
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) / Zagni, N.. - (2024), pp. 1-3. (Intervento presentato al convegno 2024 IEEE Electron Devices Technology and Manufacturing Conference tenutosi a Bangalore, India nel 3-6 Marzo 2024) [10.1109/EDTM58488.2024.10511585].
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)
Zagni N.
2024
Abstract
GaN-based devices are getting more common in the power electronics market thanks also to the improvements obtained in their stability and reliability. Further development of the technology in terms of either lateral p-GaN HEMT for low (100-V) to medium (650-V) voltage range or vertical GaN MOSFET for high (>1000-V) voltage range requires the careful assessment and modeling of the physical mechanisms leading to recoverable and permanent degradation. In this paper, a selection of the key stability/reliability issues are discussed for both lateral GaN HEMTs and vertical GaN MOSCAPs and Trench MOSFETs.
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