Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. These results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity / Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.. - In: ACS MATERIALS LETTERS. - ISSN 2639-4979. - 1:(2019), pp. 633-640. [10.1021/acsmaterialslett.9b00357]

Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

Zagni, Nicolò;
2019

Abstract

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. These results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.
29-ott-2019
1
633
640
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity / Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.. - In: ACS MATERIALS LETTERS. - ISSN 2639-4979. - 1:(2019), pp. 633-640. [10.1021/acsmaterialslett.9b00357]
Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1184122
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