In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range. By monitoring the resulting drain current transients, the activation energy as well as time constants of the processes are characterized. Not trivially, both RON increase/decrease were found to be thermally activated and with same activation energy. We attribute the thermal activation of both RON increase/decrease to the charging/discharging of hole traps present in the AlGaN barrier in the region below the gate.

Gate-Bias Induced RON Instability in p-GaN Power HEMTs / Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 44:6(2023), pp. 915-918. [10.1109/LED.2023.3265503]

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

Chini, Alessandro;Zagni, Nicolo'
;
Verzellesi, Giovanni;Cioni, Marcello;
2023

Abstract

In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range. By monitoring the resulting drain current transients, the activation energy as well as time constants of the processes are characterized. Not trivially, both RON increase/decrease were found to be thermally activated and with same activation energy. We attribute the thermal activation of both RON increase/decrease to the charging/discharging of hole traps present in the AlGaN barrier in the region below the gate.
2023
7-apr-2023
44
6
915
918
Gate-Bias Induced RON Instability in p-GaN Power HEMTs / Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 44:6(2023), pp. 915-918. [10.1109/LED.2023.3265503]
Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1301366
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