The long-standing tug-of-war between off-state leakage power consumption and switching speed has posed severe challenges to the scaling of semiconductor devices. Deeply scaled short-channel transistors are faster but consume more off-state power. This power vs speed trade-off stems from the fundamental physical limit related to the thermionic emission that governs switching in field-effect transistors. There is a broad consensus in the semiconductor industry that future progress is impossible unless the next-generation transistors and circuits overcome the so-called Boltzmann limit associated with thermionic emission over a barrier and offer a steeper on-off switching to enable a more aggressive voltage scaling. In this chapter, we explain the need for and suggest an intuitive classification of the emerging transistor technologies. We use two illustrative examples of next-generation transistors (i.e., negative capacitance FET (NCFET) and phase FET (PhaseFET)) to explain the relative merits of gate-controlled vs channel-controlled steep-slope switching. We explain the basic principle of device operation, summarize the experimental results reported in the literature, and highlight the speed and reliability challenges to be resolved before the devices are integrated into practical systems. In addition, the chapter includes a careful analysis of circuits based on these emerging transistor technologies with applications toward Boolean logic, memories, and non-Boolean computing. The analysis suggests relative merits of various circuit designs and applications pecific opportunities for significant power-performance improvement.

Negative Capacitors and Applications / Ashraful Alam, Muhammad; Zagni, Nicolo'; Kumar Saha, Atanu; Thakuria, Niharika; Thirumala, Sandeep; Kumar Gupta, Sumeet. - (2023), pp. 931-958. [10.1007/978-3-030-79827-7_26]

Negative Capacitors and Applications

Nicolo' Zagni;
2023-01-01

Abstract

The long-standing tug-of-war between off-state leakage power consumption and switching speed has posed severe challenges to the scaling of semiconductor devices. Deeply scaled short-channel transistors are faster but consume more off-state power. This power vs speed trade-off stems from the fundamental physical limit related to the thermionic emission that governs switching in field-effect transistors. There is a broad consensus in the semiconductor industry that future progress is impossible unless the next-generation transistors and circuits overcome the so-called Boltzmann limit associated with thermionic emission over a barrier and offer a steeper on-off switching to enable a more aggressive voltage scaling. In this chapter, we explain the need for and suggest an intuitive classification of the emerging transistor technologies. We use two illustrative examples of next-generation transistors (i.e., negative capacitance FET (NCFET) and phase FET (PhaseFET)) to explain the relative merits of gate-controlled vs channel-controlled steep-slope switching. We explain the basic principle of device operation, summarize the experimental results reported in the literature, and highlight the speed and reliability challenges to be resolved before the devices are integrated into practical systems. In addition, the chapter includes a careful analysis of circuits based on these emerging transistor technologies with applications toward Boolean logic, memories, and non-Boolean computing. The analysis suggests relative merits of various circuit designs and applications pecific opportunities for significant power-performance improvement.
Springer Handbook of Semiconductor Devices
Massimo Rudan, Rossella Brunetti, Susanna Reggiani
978-3-030-79826-0
978-3-030-79827-7
Negative Capacitors and Applications / Ashraful Alam, Muhammad; Zagni, Nicolo'; Kumar Saha, Atanu; Thakuria, Niharika; Thirumala, Sandeep; Kumar Gupta, Sumeet. - (2023), pp. 931-958. [10.1007/978-3-030-79827-7_26]
Ashraful Alam, Muhammad; Zagni, Nicolo'; Kumar Saha, Atanu; Thakuria, Niharika; Thirumala, Sandeep; Kumar Gupta, Sumeet
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1291184
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