Gate bias effects on p-GaN power HEMTs stability are primarily investigated in terms of threshold voltage (V T ) drifts. However, applying positive and negative gate bias for long time can also induce ON-resistance (R ON ) instability which is often overlooked in the literature. In this work, we characterize I D -V GS after applying a –6/+6 V gate initialization (VGP) bias for 3000 s at different temperatures and reproduce the same characteristics by means of numerical simulations. The comparison between measurements and simulations allowed attributing the observed R ON dispersion to barrier acceptor traps emitting/capturing holes (injected/removed by the Schottky contact on the p-GaN layer) after V GP = –6/+6 V, respectively. Characterization of I D /R ON transients at different temperatures obtained after initialization at +6 V while keeping a gate baseline bias V GB = –6 V allows extracting an activation energy E A ≈ 0.4 eV. This feature is also reproduced by the simulations, further indicating that the underlying mechanism of R ON increase is the charge of acceptor traps in the barrier mediated by hole removal through the Schottky gate contact on the p-GaN region.

Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs / Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Eloisa Castagna, Maria; Iucolano, Ferdinando. - (2023). (Intervento presentato al convegno 2023 IEEE International Integrated Reliability Workshop (IIRW) tenutosi a South Lake Tahoe, CA, USA nel 8-12 Ottobre 2023) [10.1109/iirw59383.2023.10477714].

Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs

Zagni, Nicolo';Chini, Alessandro;Verzellesi, Giovanni;Cioni, Marcello;Giorgino, Giovanni;
2023

Abstract

Gate bias effects on p-GaN power HEMTs stability are primarily investigated in terms of threshold voltage (V T ) drifts. However, applying positive and negative gate bias for long time can also induce ON-resistance (R ON ) instability which is often overlooked in the literature. In this work, we characterize I D -V GS after applying a –6/+6 V gate initialization (VGP) bias for 3000 s at different temperatures and reproduce the same characteristics by means of numerical simulations. The comparison between measurements and simulations allowed attributing the observed R ON dispersion to barrier acceptor traps emitting/capturing holes (injected/removed by the Schottky contact on the p-GaN layer) after V GP = –6/+6 V, respectively. Characterization of I D /R ON transients at different temperatures obtained after initialization at +6 V while keeping a gate baseline bias V GB = –6 V allows extracting an activation energy E A ≈ 0.4 eV. This feature is also reproduced by the simulations, further indicating that the underlying mechanism of R ON increase is the charge of acceptor traps in the barrier mediated by hole removal through the Schottky gate contact on the p-GaN region.
2023
27-mar-2024
2023 IEEE International Integrated Reliability Workshop (IIRW)
South Lake Tahoe, CA, USA
8-12 Ottobre 2023
Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Eloisa Castagna, Maria; Iucolano, Ferdinando
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs / Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Eloisa Castagna, Maria; Iucolano, Ferdinando. - (2023). (Intervento presentato al convegno 2023 IEEE International Integrated Reliability Workshop (IIRW) tenutosi a South Lake Tahoe, CA, USA nel 8-12 Ottobre 2023) [10.1109/iirw59383.2023.10477714].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1335767
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