The semiconductor industry is undergoing an epochal shift, driven by the move to pseudo-three- (2.5D) and three-dimensional (3D) packaging of integrated circuits based on non-scalable classical Boltzmann transistors. In this regard, the scaling potential of post-Boltzmann phase-transition logic switches, memory elements, super-Nernstian sensors, and zero-energy displays remains underappreciated. Broadly defined, phase-transition switches operate between two stable states separated by an energy or power barrier, offering promising solutions for the future of electronics. This tutorial paper provides a foundational and intuitive understanding of the emerging field of phase-transition electronics. It also highlights open issues and research opportunities, serving as a roadmap for advancing this critical technology.

Physics of Phase Transition Switches / Alam, Muhammad Ashraful; Zagni, Nicolo'. - In: IEEE ELECTRON DEVICES REVIEWS. - ISSN 2995-424X. - 1:1(2024), pp. 53-62. [10.1109/edr.2024.3491712]

Physics of Phase Transition Switches

Zagni, Nicolo'
2024

Abstract

The semiconductor industry is undergoing an epochal shift, driven by the move to pseudo-three- (2.5D) and three-dimensional (3D) packaging of integrated circuits based on non-scalable classical Boltzmann transistors. In this regard, the scaling potential of post-Boltzmann phase-transition logic switches, memory elements, super-Nernstian sensors, and zero-energy displays remains underappreciated. Broadly defined, phase-transition switches operate between two stable states separated by an energy or power barrier, offering promising solutions for the future of electronics. This tutorial paper provides a foundational and intuitive understanding of the emerging field of phase-transition electronics. It also highlights open issues and research opportunities, serving as a roadmap for advancing this critical technology.
2024
6-nov-2024
1
1
53
62
Physics of Phase Transition Switches / Alam, Muhammad Ashraful; Zagni, Nicolo'. - In: IEEE ELECTRON DEVICES REVIEWS. - ISSN 2995-424X. - 1:1(2024), pp. 53-62. [10.1109/edr.2024.3491712]
Alam, Muhammad Ashraful; Zagni, Nicolo'
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1365329
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