Dynamic on-resistance ( RON) affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic RON is associated to either electron trapping at device surface or dynamic effects occurring in the buffer. However, in p-GaN HEMTs the floating p-GaN region can have an additional role on dynamic RON , due to removal/injection of holes from/into the barrier with relatively long time constants, which can be erroneously interpreted as a reliability issue. In this letter, we present a model to explain the dynamic RON due to surface-related effects in p-GaN power HEMTs. The model, called ‘hole virtual gate’, attributes the experimentally observed RON instability due to negative/positive gate bias stress (NGS/PGS) to the charging/discharging of surface traps in the AlGaN barrier by the removal/injection of holes through the gate metal/p-GaN Schottky junction. We verify the validity of the model by means of calibrated numerical simulations, that correlate the activation energy EA ≈ 0.4 eV of both RON increase/decrease during NGS/PGS to the thermal ionization energy of traps in the barrier.

Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs / Zagni, N.; Verzellesi, G.; Bertacchini, A.; Borgarino, M.; Iucolano, F.; Chini, A.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 45:5(2024), pp. 801-804. [10.1109/LED.2024.3375912]

Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs

Zagni N.;Verzellesi G.;Bertacchini A.;Borgarino M.;Chini A.
2024

Abstract

Dynamic on-resistance ( RON) affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic RON is associated to either electron trapping at device surface or dynamic effects occurring in the buffer. However, in p-GaN HEMTs the floating p-GaN region can have an additional role on dynamic RON , due to removal/injection of holes from/into the barrier with relatively long time constants, which can be erroneously interpreted as a reliability issue. In this letter, we present a model to explain the dynamic RON due to surface-related effects in p-GaN power HEMTs. The model, called ‘hole virtual gate’, attributes the experimentally observed RON instability due to negative/positive gate bias stress (NGS/PGS) to the charging/discharging of surface traps in the AlGaN barrier by the removal/injection of holes through the gate metal/p-GaN Schottky junction. We verify the validity of the model by means of calibrated numerical simulations, that correlate the activation energy EA ≈ 0.4 eV of both RON increase/decrease during NGS/PGS to the thermal ionization energy of traps in the barrier.
2024
45
5
801
804
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs / Zagni, N.; Verzellesi, G.; Bertacchini, A.; Borgarino, M.; Iucolano, F.; Chini, A.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 45:5(2024), pp. 801-804. [10.1109/LED.2024.3375912]
Zagni, N.; Verzellesi, G.; Bertacchini, A.; Borgarino, M.; Iucolano, F.; Chini, A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1337211
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