CANALI, Claudio
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 4.824
EU - Europa 1.790
AS - Asia 712
SA - Sud America 20
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 1
Totale 7.352
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 4.813
GB - Regno Unito 778
SE - Svezia 327
CN - Cina 241
SG - Singapore 220
DE - Germania 208
UA - Ucraina 127
TR - Turchia 124
FI - Finlandia 92
HK - Hong Kong 88
IT - Italia 77
RU - Federazione Russa 58
BG - Bulgaria 49
BR - Brasile 18
FR - Francia 17
IE - Irlanda 15
CA - Canada 11
PT - Portogallo 11
IN - India 9
LT - Lituania 7
BE - Belgio 6
JP - Giappone 6
NL - Olanda 5
TW - Taiwan 5
AT - Austria 4
EU - Europa 3
IQ - Iraq 3
KR - Corea 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BD - Bangladesh 2
IR - Iran 2
PH - Filippine 2
PL - Polonia 2
RS - Serbia 2
UZ - Uzbekistan 2
AR - Argentina 1
AU - Australia 1
CH - Svizzera 1
CL - Cile 1
DK - Danimarca 1
ES - Italia 1
IL - Israele 1
MD - Moldavia 1
MY - Malesia 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
VN - Vietnam 1
Totale 7.352
Salva come PNG Salva come JPEG
Città #
Santa Clara 659
Southend 618
Fairfield 549
Woodbridge 398
Chandler 339
Ashburn 338
Houston 319
Jacksonville 300
Ann Arbor 260
Seattle 223
Dearborn 211
Wilmington 187
Cambridge 181
Nyköping 173
Singapore 164
Izmir 90
Hong Kong 88
Des Moines 73
Beijing 69
Princeton 52
Sofia 49
Eugene 47
Grafing 46
Helsinki 45
San Diego 44
Chicago 43
Moscow 28
Redwood City 22
Modena 21
London 20
Dublin 15
Falls Church 14
Bremen 13
New York 13
Shanghai 13
Nanjing 10
Falkenstein 9
Kunming 9
Toronto 9
Boardman 8
Guangzhou 8
Indiana 8
Los Angeles 8
Auburn Hills 7
Norwalk 7
San Mateo 7
Brussels 6
Chiswick 6
Hefei 6
Prescot 6
Acton 5
Milan 5
Taipei 5
Chengdu 4
Hounslow 4
Jinan 4
Kilburn 4
Philadelphia 4
Saint Petersburg 4
San Francisco 4
Verona 4
Vienna 4
Washington 4
Wuhan 4
Cologne 3
Frankfurt am Main 3
Gothenburg 3
Padova 3
Plano 3
Reggio Emilia 3
Shaoxing 3
Yellow Springs 3
Ahmedabad 2
Augusta 2
Baghdad 2
Baotou 2
Bologna 2
Bordeaux 2
Columbus 2
Dallas 2
Delhi 2
Denver 2
Gif-sur-yvette 2
Hakusan 2
Islington 2
Jiaxing 2
La Spezia 2
Noicattaro 2
Pavia 2
Porto 2
Quanzhou 2
Rehlingen-siersburg 2
San Jose 2
Tashkent 2
Tulare 2
Wenzhou 2
Awara 1
Bangkok 1
Baturité 1
Belgrade 1
Totale 5.973
Salva come PNG Salva come JPEG
Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 239
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 220
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 208
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 197
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 197
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 194
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 193
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 179
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 178
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 175
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 175
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 174
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 172
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 172
Trap characterization in buried-gate n-channel 6H-SiC JFETs 170
Piezoresistive effects in thick-film resistors 169
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 167
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 165
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 164
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 163
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 163
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 160
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 159
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 159
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's 157
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 156
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 152
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 151
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 151
Strain Sensitivity in Thick-Film Resistors 141
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 138
Physical investigation of trap-related effects in power HFETs and their reliability implications 135
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 122
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 122
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 120
Impact-ionization effects in advanced Si bipolar transistors 118
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 118
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 115
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 112
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 112
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 108
Deep traps in Beta-rhombohedral boron 107
Trap-related effects in 6H-SiC buried-gate JFETs 107
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 103
Numerical analysis of hot electron degradation modes in power HFETs 97
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 95
Surface-related kink effect in AlGaAs/GaAs power HFETs 86
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 43
Epitaxial silicon carbide charge particle detectors 42
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 40
Double-junction effect in proton-irradiated silicon diodes 40
Deep levels in silicon carbide Schottky diodes 38
Electric field distribution in irradiated silicon detectors 35
Influence of substrate on the performance of semi-insulating GaAs detectors 32
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 7.406
Salva come PNG Salva come JPEG
Categoria #
all - tutte 30.536
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.536
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020721 0 0 0 0 0 0 238 121 157 46 83 76
2020/20211.070 105 26 81 110 114 88 120 108 97 124 50 47
2021/2022834 25 118 80 59 21 87 53 24 68 51 161 87
2022/2023934 98 99 50 89 81 204 18 87 118 8 35 47
2023/2024434 22 29 22 76 123 28 19 48 8 18 5 36
2024/20251.137 125 19 21 157 469 344 2 0 0 0 0 0
Totale 7.406