CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 4.977
EU - Europa 2.016
AS - Asia 1.431
SA - Sud America 146
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 2
OC - Oceania 1
Totale 8.579
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Nazione #
US - Stati Uniti d'America 4.949
GB - Regno Unito 891
CN - Cina 441
SG - Singapore 395
SE - Svezia 349
HK - Hong Kong 329
DE - Germania 219
BR - Brasile 135
UA - Ucraina 130
TR - Turchia 126
FI - Finlandia 104
RU - Federazione Russa 95
IT - Italia 85
KR - Corea 77
BG - Bulgaria 49
FR - Francia 18
CA - Canada 15
IE - Irlanda 15
IN - India 12
PT - Portogallo 12
LT - Lituania 10
JP - Giappone 9
NL - Olanda 9
BE - Belgio 7
MX - Messico 6
AR - Argentina 5
AT - Austria 5
TW - Taiwan 5
ES - Italia 4
IQ - Iraq 4
BD - Bangladesh 3
EU - Europa 3
LK - Sri Lanka 3
UZ - Uzbekistan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
CH - Svizzera 2
CL - Cile 2
DK - Danimarca 2
IL - Israele 2
IR - Iran 2
JM - Giamaica 2
KG - Kirghizistan 2
LU - Lussemburgo 2
PH - Filippine 2
PL - Polonia 2
RS - Serbia 2
SA - Arabia Saudita 2
TT - Trinidad e Tobago 2
VE - Venezuela 2
VN - Vietnam 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
CO - Colombia 1
CR - Costa Rica 1
EC - Ecuador 1
GT - Guatemala 1
JO - Giordania 1
KE - Kenya 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LV - Lettonia 1
MA - Marocco 1
MD - Moldavia 1
MY - Malesia 1
NP - Nepal 1
OM - Oman 1
PA - Panama 1
QA - Qatar 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TJ - Tagikistan 1
Totale 8.579
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Città #
Santa Clara 659
Southend 618
Fairfield 549
Woodbridge 398
Chandler 339
Ashburn 338
Hong Kong 329
Houston 320
Jacksonville 300
Ann Arbor 260
Singapore 227
Seattle 224
Dearborn 211
Wilmington 187
Cambridge 181
Nyköping 173
Hefei 163
London 129
Izmir 90
Seoul 74
Des Moines 73
Beijing 70
Helsinki 52
Princeton 52
Sofia 49
Eugene 47
Chicago 46
Grafing 46
Council Bluffs 44
San Diego 44
Moscow 30
Shanghai 23
Redwood City 22
Modena 21
Los Angeles 20
New York 16
Dublin 15
Falkenstein 14
Falls Church 14
Bremen 13
São Paulo 11
Nanjing 10
Toronto 10
Kunming 9
Boardman 8
Guangzhou 8
Indiana 8
Auburn Hills 7
Belo Horizonte 7
Brussels 7
Norwalk 7
Padova 7
San Francisco 7
San Mateo 7
Albany 6
Chiswick 6
Prescot 6
Rio de Janeiro 6
The Dalles 6
Acton 5
Frankfurt am Main 5
Milan 5
Taipei 5
Turku 5
Chengdu 4
Hounslow 4
Jinan 4
Kilburn 4
Philadelphia 4
Saint Petersburg 4
Tokyo 4
Verona 4
Vienna 4
Washington 4
Wuhan 4
Baghdad 3
Changsha 3
Cologne 3
Colombo 3
Columbus 3
Curitiba 3
Dallas 3
Delhi 3
Gothenburg 3
Montreal 3
Plano 3
Recife 3
Reggio Emilia 3
Shaoxing 3
Tashkent 3
Yellow Springs 3
Ahmedabad 2
Ankara 2
Anápolis 2
Augusta 2
Baotou 2
Berlin 2
Bishkek 2
Bologna 2
Bordeaux 2
Totale 6.758
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Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 263
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 239
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 238
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 227
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 223
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 217
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 213
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 203
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 201
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 200
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 198
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 197
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 195
Piezoresistive effects in thick-film resistors 194
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 194
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 194
Trap characterization in buried-gate n-channel 6H-SiC JFETs 192
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 188
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's 187
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 186
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 185
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 185
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 184
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 183
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 182
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 182
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 176
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 173
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 170
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 157
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 156
Strain Sensitivity in Thick-Film Resistors 156
Physical investigation of trap-related effects in power HFETs and their reliability implications 155
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 147
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 142
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 141
Impact-ionization effects in advanced Si bipolar transistors 137
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 137
Deep traps in Beta-rhombohedral boron 132
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 131
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 130
Trap-related effects in 6H-SiC buried-gate JFETs 129
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 124
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 122
Numerical analysis of hot electron degradation modes in power HFETs 115
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 105
Surface-related kink effect in AlGaAs/GaAs power HFETs 103
Epitaxial silicon carbide charge particle detectors 74
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 71
Double-junction effect in proton-irradiated silicon diodes 66
Electric field distribution in irradiated silicon detectors 65
Deep levels in silicon carbide Schottky diodes 63
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 59
Influence of substrate on the performance of semi-insulating GaAs detectors 46
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 8.633
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Categoria #
all - tutte 35.092
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.092
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202076 0 0 0 0 0 0 0 0 0 0 0 76
2020/20211.070 105 26 81 110 114 88 120 108 97 124 50 47
2021/2022834 25 118 80 59 21 87 53 24 68 51 161 87
2022/2023934 98 99 50 89 81 204 18 87 118 8 35 47
2023/2024434 22 29 22 76 123 28 19 48 8 18 5 36
2024/20252.364 125 19 21 157 469 344 173 162 200 61 371 262
Totale 8.633