CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 4.069
EU - Europa 1.681
AS - Asia 415
Continente sconosciuto - Info sul continente non disponibili 5
SA - Sud America 1
Totale 6.171
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Nazione #
US - Stati Uniti d'America 4.061
GB - Regno Unito 778
SE - Svezia 322
DE - Germania 197
CN - Cina 169
UA - Ucraina 126
TR - Turchia 124
HK - Hong Kong 88
IT - Italia 66
FI - Finlandia 64
BG - Bulgaria 49
FR - Francia 17
IE - Irlanda 15
RU - Federazione Russa 15
PT - Portogallo 11
IN - India 9
CA - Canada 8
JP - Giappone 6
NL - Olanda 5
TW - Taiwan 5
AT - Austria 4
BE - Belgio 4
EU - Europa 3
KR - Corea 3
A2 - ???statistics.table.value.countryCode.A2??? 2
IR - Iran 2
PH - Filippine 2
RS - Serbia 2
BD - Bangladesh 1
CH - Svizzera 1
CL - Cile 1
DK - Danimarca 1
ES - Italia 1
IL - Israele 1
MD - Moldavia 1
MY - Malesia 1
PL - Polonia 1
SA - Arabia Saudita 1
SG - Singapore 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
VN - Vietnam 1
Totale 6.171
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Città #
Southend 618
Fairfield 549
Woodbridge 398
Chandler 339
Ashburn 327
Houston 319
Jacksonville 300
Ann Arbor 260
Seattle 223
Dearborn 211
Wilmington 187
Cambridge 181
Nyköping 173
Izmir 90
Hong Kong 88
Des Moines 73
Beijing 68
Princeton 52
Sofia 49
Eugene 47
Grafing 46
San Diego 44
Redwood City 22
Modena 21
London 20
Helsinki 17
Dublin 15
Falls Church 14
Bremen 13
New York 12
Nanjing 10
Shanghai 10
Kunming 9
Indiana 8
Auburn Hills 7
Boardman 7
Norwalk 7
San Mateo 7
Chiswick 6
Hefei 6
Prescot 6
Toronto 6
Acton 5
Los Angeles 5
Taipei 5
Brussels 4
Guangzhou 4
Hounslow 4
Kilburn 4
Philadelphia 4
Saint Petersburg 4
Verona 4
Vienna 4
Washington 4
Chengdu 3
Cologne 3
Jinan 3
Milan 3
Moscow 3
Padova 3
Plano 3
Reggio Emilia 3
San Francisco 3
Yellow Springs 3
Ahmedabad 2
Augusta 2
Baotou 2
Bordeaux 2
Chicago 2
Columbus 2
Delhi 2
Denver 2
Gif-sur-yvette 2
Hakusan 2
Islington 2
La Spezia 2
Pavia 2
Porto 2
Rehlingen-siersburg 2
San Jose 2
Shaoxing 2
Tulare 2
Wenzhou 2
Wuhan 2
Awara 1
Bangkok 1
Belgrade 1
Berkeley 1
Berlin 1
Camaiore 1
Canyon Country 1
Castelfranco Emilia 1
Cergy 1
Changchun 1
Changsha 1
Chisinau 1
Cormeilles-en-Parisis 1
Dongguan 1
Florence 1
Frankfurt am Main 1
Totale 5.002
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Nome #
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 194
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 187
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 183
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 175
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 175
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 173
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 167
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 158
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 154
Trap characterization in buried-gate n-channel 6H-SiC JFETs 154
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 153
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 152
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 152
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 150
Piezoresistive effects in thick-film resistors 150
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 148
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 146
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 145
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 141
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 140
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 138
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 137
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 137
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 136
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's 135
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 133
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 131
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 129
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 125
Strain Sensitivity in Thick-Film Resistors 120
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 119
Physical investigation of trap-related effects in power HFETs and their reliability implications 115
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 104
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 99
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 99
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 97
Impact-ionization effects in advanced Si bipolar transistors 96
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 95
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 92
Deep traps in Beta-rhombohedral boron 88
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 88
Trap-related effects in 6H-SiC buried-gate JFETs 88
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 87
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 83
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 79
Numerical analysis of hot electron degradation modes in power HFETs 78
Surface-related kink effect in AlGaAs/GaAs power HFETs 67
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 23
Epitaxial silicon carbide charge particle detectors 22
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 22
Double-junction effect in proton-irradiated silicon diodes 21
Deep levels in silicon carbide Schottky diodes 17
Electric field distribution in irradiated silicon detectors 14
Influence of substrate on the performance of semi-insulating GaAs detectors 13
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 6.225
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Categoria #
all - tutte 24.210
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.210
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019511 0 0 0 0 0 0 0 0 0 74 220 217
2019/20201.499 96 131 63 127 161 200 238 121 157 46 83 76
2020/20211.070 105 26 81 110 114 88 120 108 97 124 50 47
2021/2022834 25 118 80 59 21 87 53 24 68 51 161 87
2022/2023934 98 99 50 89 81 204 18 87 118 8 35 47
2023/2024390 22 29 22 76 123 28 19 48 8 15 0 0
Totale 6.225