CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 6.250
AS - Asia 2.974
EU - Europa 2.232
SA - Sud America 350
Continente sconosciuto - Info sul continente non disponibili 62
AF - Africa 40
OC - Oceania 1
Totale 11.909
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Nazione #
US - Stati Uniti d'America 6.157
CN - Cina 1.041
GB - Regno Unito 898
SG - Singapore 811
HK - Hong Kong 361
SE - Svezia 351
BR - Brasile 285
VN - Vietnam 247
DE - Germania 241
IT - Italia 161
KR - Corea 157
UA - Ucraina 134
TR - Turchia 133
FI - Finlandia 123
RU - Federazione Russa 96
FR - Francia 71
IN - India 54
CA - Canada 51
BG - Bulgaria 48
BD - Bangladesh 28
AR - Argentina 25
JP - Giappone 24
MX - Messico 24
IQ - Iraq 21
IE - Irlanda 15
NL - Olanda 15
PL - Polonia 15
CO - Colombia 12
LT - Lituania 12
PT - Portogallo 11
BE - Belgio 10
ZA - Sudafrica 10
ID - Indonesia 9
SA - Arabia Saudita 9
EC - Ecuador 8
PK - Pakistan 8
ES - Italia 7
AE - Emirati Arabi Uniti 6
PH - Filippine 6
TW - Taiwan 6
VE - Venezuela 6
AT - Austria 5
CL - Cile 5
DZ - Algeria 5
KE - Kenya 5
NP - Nepal 5
PY - Paraguay 5
TN - Tunisia 5
UZ - Uzbekistan 5
AZ - Azerbaigian 4
MA - Marocco 4
MY - Malesia 4
OM - Oman 4
RS - Serbia 4
TH - Thailandia 4
DK - Danimarca 3
EG - Egitto 3
EU - Europa 3
HN - Honduras 3
JM - Giamaica 3
PA - Panama 3
PE - Perù 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
CH - Svizzera 2
CR - Costa Rica 2
CY - Cipro 2
GH - Ghana 2
IL - Israele 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MD - Moldavia 2
QA - Qatar 2
SN - Senegal 2
TT - Trinidad e Tobago 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
BS - Bahamas 1
BY - Bielorussia 1
CG - Congo 1
CU - Cuba 1
ET - Etiopia 1
GE - Georgia 1
GT - Guatemala 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MN - Mongolia 1
NI - Nicaragua 1
NO - Norvegia 1
Totale 11.849
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Città #
Santa Clara 668
Southend 608
Ashburn 545
Fairfield 531
Hefei 501
Singapore 473
Woodbridge 393
Hong Kong 357
Chandler 333
Houston 314
Jacksonville 294
Ann Arbor 258
San Jose 229
Seattle 219
Dearborn 208
Cambridge 178
Wilmington 177
Nyköping 170
Seoul 152
Chicago 142
London 131
Beijing 120
Los Angeles 100
Izmir 90
The Dalles 87
Des Moines 74
Council Bluffs 72
Ho Chi Minh City 72
Hanoi 69
Helsinki 68
Princeton 51
Buffalo 48
Sofia 48
Eugene 46
Grafing 45
San Diego 45
Lauterbourg 43
New York 43
Milan 34
São Paulo 33
Kent 32
Moscow 30
Dallas 29
Shanghai 27
Orem 25
Redwood City 22
Modena 20
Falkenstein 19
Montreal 17
Tokyo 16
Chennai 15
Dublin 15
Salt Lake City 15
Brooklyn 14
Falls Church 14
Bremen 13
Columbus 12
Elk Grove Village 12
Munich 12
Atlanta 11
Belo Horizonte 11
Guangzhou 11
Nanjing 11
Rio de Janeiro 11
Tampa 11
Da Nang 10
Denver 10
Haiphong 10
Miano 10
Philadelphia 10
San Francisco 10
Toronto 10
Warsaw 10
Brantford 9
Brussels 9
Kunming 9
Manchester 9
Turku 9
Albany 8
Boardman 8
Frankfurt am Main 8
Indiana 8
Mexico City 8
Norwalk 8
Redondo Beach 8
Stockholm 8
Washington 8
Ankara 7
Auburn Hills 7
Baghdad 7
Biên Hòa 7
Changsha 7
Curitiba 7
Padova 7
Phoenix 7
Chiswick 6
Dulles 6
Prescot 6
San Mateo 6
Acton 5
Totale 8.776
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Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 356
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 338
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 324
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 318
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 314
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 300
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 298
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 290
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 277
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 277
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 277
Piezoresistive effects in thick-film resistors 276
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 263
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 261
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 260
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 257
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 254
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 253
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 253
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 252
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 250
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 247
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 246
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 245
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 235
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 229
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 229
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 227
Physical investigation of trap-related effects in power HFETs and their reliability implications 219
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 219
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 215
Trap characterization in buried-gate n-channel 6H-SiC JFETs 215
Strain Sensitivity in Thick-Film Resistors 205
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 197
Impact-ionization effects in advanced Si bipolar transistors 196
Deep traps in Beta-rhombohedral boron 196
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 195
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 195
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 178
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 178
Trap-related effects in 6H-SiC buried-gate JFETs 176
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 168
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 166
Numerical analysis of hot electron degradation modes in power HFETs 162
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 155
Surface-related kink effect in AlGaAs/GaAs power HFETs 149
Deep levels in silicon carbide Schottky diodes 143
Electric field distribution in irradiated silicon detectors 142
Epitaxial silicon carbide charge particle detectors 139
Double-junction effect in proton-irradiated silicon diodes 139
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 139
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 119
Influence of substrate on the performance of semi-insulating GaAs detectors 97
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 11.909
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Categoria #
all - tutte 46.333
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.333
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022814 23 118 79 57 21 83 53 24 67 49 155 85
2022/2023921 97 95 49 86 80 202 18 87 117 8 35 47
2023/2024427 21 29 22 74 120 28 19 47 8 18 5 36
2024/20252.373 122 19 21 154 460 337 168 158 197 60 361 316
2025/20263.327 234 284 319 383 443 300 359 120 354 233 153 145
2026/202775 75 0 0 0 0 0 0 0 0 0 0 0
Totale 11.909