CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 6.838
AS - Asia 2.986
EU - Europa 2.252
SA - Sud America 351
Continente sconosciuto - Info sul continente non disponibili 62
AF - Africa 41
OC - Oceania 1
Totale 12.531
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Nazione #
US - Stati Uniti d'America 6.721
CN - Cina 1.044
GB - Regno Unito 901
SG - Singapore 812
HK - Hong Kong 363
SE - Svezia 351
BR - Brasile 286
VN - Vietnam 247
DE - Germania 241
IT - Italia 176
KR - Corea 157
UA - Ucraina 135
TR - Turchia 133
FI - Finlandia 123
RU - Federazione Russa 96
FR - Francia 71
CA - Canada 57
IN - India 54
BG - Bulgaria 48
BD - Bangladesh 30
AR - Argentina 25
MX - Messico 25
JP - Giappone 24
IQ - Iraq 22
IE - Irlanda 15
NL - Olanda 15
PL - Polonia 15
CO - Colombia 12
LT - Lituania 12
ID - Indonesia 11
PT - Portogallo 11
BE - Belgio 10
CR - Costa Rica 10
ZA - Sudafrica 10
SA - Arabia Saudita 9
EC - Ecuador 8
ES - Italia 8
PK - Pakistan 8
AE - Emirati Arabi Uniti 6
HN - Honduras 6
JM - Giamaica 6
PH - Filippine 6
TW - Taiwan 6
VE - Venezuela 6
AT - Austria 5
CL - Cile 5
DZ - Algeria 5
KE - Kenya 5
NP - Nepal 5
PY - Paraguay 5
TH - Thailandia 5
TN - Tunisia 5
UZ - Uzbekistan 5
AZ - Azerbaigian 4
MA - Marocco 4
MY - Malesia 4
OM - Oman 4
RS - Serbia 4
DK - Danimarca 3
EG - Egitto 3
EU - Europa 3
GT - Guatemala 3
PA - Panama 3
PE - Perù 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
CH - Svizzera 2
CY - Cipro 2
GH - Ghana 2
IL - Israele 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MD - Moldavia 2
NI - Nicaragua 2
QA - Qatar 2
SN - Senegal 2
TT - Trinidad e Tobago 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
BS - Bahamas 1
BY - Bielorussia 1
CG - Congo 1
CU - Cuba 1
ET - Etiopia 1
GE - Georgia 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
Totale 12.470
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Città #
Ashburn 760
Santa Clara 671
Southend 608
Fairfield 531
Hefei 501
Singapore 474
Woodbridge 393
Hong Kong 358
Chandler 333
Houston 317
San Jose 311
Jacksonville 294
Ann Arbor 258
Seattle 219
Dearborn 208
Wilmington 179
Cambridge 178
Nyköping 170
Council Bluffs 157
Seoul 152
Chicago 143
London 131
Beijing 120
Los Angeles 103
Izmir 90
The Dalles 87
Des Moines 74
Ho Chi Minh City 72
Hanoi 69
Helsinki 68
Princeton 51
Buffalo 50
Sofia 48
Eugene 46
San Diego 46
Grafing 45
New York 45
Lauterbourg 43
Milan 43
Dallas 33
São Paulo 33
Kent 32
Moscow 30
Shanghai 27
Orem 25
Redwood City 22
Modena 21
Falkenstein 19
Montreal 17
Tokyo 16
Chennai 15
Dublin 15
Salt Lake City 15
Brooklyn 14
Falls Church 14
Bremen 13
Columbus 13
Elk Grove Village 12
Munich 12
Tampa 12
Toronto 12
Atlanta 11
Belo Horizonte 11
Guangzhou 11
Nanjing 11
Philadelphia 11
Rio de Janeiro 11
Washington 11
Da Nang 10
Denver 10
Haiphong 10
Miano 10
San Francisco 10
Warsaw 10
Brantford 9
Brussels 9
Kunming 9
Manchester 9
Mexico City 9
Turku 9
Albany 8
Boardman 8
Frankfurt am Main 8
Indiana 8
Norwalk 8
Phoenix 8
Redondo Beach 8
Stockholm 8
Ankara 7
Auburn Hills 7
Baghdad 7
Biên Hòa 7
Changsha 7
Curitiba 7
Newark 7
Padova 7
Baltimore 6
Chiswick 6
Dulles 6
Prescot 6
Totale 9.203
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Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 366
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 345
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 334
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 329
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 322
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 313
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 309
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 307
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 302
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 293
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 288
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 282
Piezoresistive effects in thick-film resistors 281
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 270
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 270
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 268
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 266
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 264
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 262
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 261
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 258
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 255
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 255
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 254
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 251
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 244
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 239
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 233
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 233
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 232
Physical investigation of trap-related effects in power HFETs and their reliability implications 230
Trap characterization in buried-gate n-channel 6H-SiC JFETs 221
Strain Sensitivity in Thick-Film Resistors 214
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 213
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 207
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 205
Impact-ionization effects in advanced Si bipolar transistors 203
Deep traps in Beta-rhombohedral boron 203
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 201
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 194
Numerical analysis of hot electron degradation modes in power HFETs 189
Trap-related effects in 6H-SiC buried-gate JFETs 185
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 183
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 173
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 167
Surface-related kink effect in AlGaAs/GaAs power HFETs 157
Deep levels in silicon carbide Schottky diodes 156
Epitaxial silicon carbide charge particle detectors 156
Electric field distribution in irradiated silicon detectors 151
Double-junction effect in proton-irradiated silicon diodes 151
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 148
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 131
Influence of substrate on the performance of semi-insulating GaAs detectors 106
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 12.531
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Categoria #
all - tutte 48.717
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.717
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022673 0 0 79 57 21 83 53 24 67 49 155 85
2022/2023921 97 95 49 86 80 202 18 87 117 8 35 47
2023/2024427 21 29 22 74 120 28 19 47 8 18 5 36
2024/20252.373 122 19 21 154 460 337 168 158 197 60 361 316
2025/20263.327 234 284 319 383 443 300 359 120 354 233 153 145
2026/2027697 79 204 414 0 0 0 0 0 0 0 0 0
Totale 12.531