CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 5.559
AS - Asia 2.464
EU - Europa 2.082
SA - Sud America 283
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 1
Totale 10.409
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Nazione #
US - Stati Uniti d'America 5.495
CN - Cina 1.012
GB - Regno Unito 902
SG - Singapore 666
SE - Svezia 360
HK - Hong Kong 340
BR - Brasile 246
DE - Germania 231
KR - Corea 133
UA - Ucraina 132
TR - Turchia 131
FI - Finlandia 108
RU - Federazione Russa 98
IT - Italia 88
VN - Vietnam 81
BG - Bulgaria 49
CA - Canada 33
IN - India 23
FR - Francia 19
AR - Argentina 18
MX - Messico 18
JP - Giappone 17
IE - Irlanda 15
PL - Polonia 13
LT - Lituania 12
PT - Portogallo 12
NL - Olanda 10
BE - Belgio 7
BD - Bangladesh 6
ES - Italia 6
IQ - Iraq 6
AT - Austria 5
CO - Colombia 5
TW - Taiwan 5
ZA - Sudafrica 5
CL - Cile 4
EC - Ecuador 4
ID - Indonesia 4
AE - Emirati Arabi Uniti 3
EU - Europa 3
KE - Kenya 3
LK - Sri Lanka 3
PA - Panama 3
PK - Pakistan 3
PY - Paraguay 3
RS - Serbia 3
SA - Arabia Saudita 3
TT - Trinidad e Tobago 3
UZ - Uzbekistan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
CH - Svizzera 2
DK - Danimarca 2
IL - Israele 2
IR - Iran 2
JM - Giamaica 2
JO - Giordania 2
KG - Kirghizistan 2
LU - Lussemburgo 2
MA - Marocco 2
PH - Filippine 2
TH - Thailandia 2
VE - Venezuela 2
AU - Australia 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
CR - Costa Rica 1
CU - Cuba 1
DZ - Algeria 1
GH - Ghana 1
GR - Grecia 1
GT - Guatemala 1
HN - Honduras 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MN - Mongolia 1
MY - Malesia 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
PS - Palestinian Territory 1
QA - Qatar 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 10.409
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Città #
Santa Clara 660
Southend 618
Fairfield 549
Hefei 516
Woodbridge 398
Ashburn 394
Singapore 387
Hong Kong 340
Chandler 339
Houston 328
Jacksonville 302
Ann Arbor 260
Seattle 225
Dearborn 211
Wilmington 187
Cambridge 181
Nyköping 173
London 132
Seoul 130
Beijing 101
Izmir 90
Los Angeles 88
Chicago 83
Des Moines 74
Buffalo 52
Helsinki 52
Princeton 52
Sofia 49
Eugene 47
Grafing 46
Council Bluffs 45
San Diego 45
New York 40
Kent 32
Moscow 31
São Paulo 30
Ho Chi Minh City 27
Hanoi 26
Shanghai 25
The Dalles 25
Redwood City 22
Modena 21
Dallas 20
Montreal 17
Dublin 15
Falkenstein 14
Falls Church 14
Bremen 13
Elk Grove Village 12
Nanjing 12
Tokyo 12
Columbus 11
Munich 11
Salt Lake City 11
Brooklyn 10
Guangzhou 10
San Francisco 10
Toronto 10
Chennai 9
Denver 9
Kunming 9
Turku 9
Warsaw 9
Atlanta 8
Belo Horizonte 8
Boardman 8
Indiana 8
Norwalk 8
Orem 8
Philadelphia 8
Redondo Beach 8
Stockholm 8
Albany 7
Ankara 7
Auburn Hills 7
Brussels 7
Curitiba 7
Padova 7
Rio de Janeiro 7
San Mateo 7
Changsha 6
Chiswick 6
Milan 6
Prescot 6
Acton 5
Charlotte 5
Frankfurt am Main 5
Mexico City 5
Phoenix 5
Taipei 5
Tampa 5
Wuhan 5
Zhengzhou 5
Boston 4
Chengdu 4
Haiphong 4
Hounslow 4
Jinan 4
Kilburn 4
Manchester 4
Totale 7.905
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Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 307
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 282
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 280
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 278
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 277
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 269
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 264
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 262
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 245
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 241
Piezoresistive effects in thick-film resistors 239
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 237
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 235
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 233
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's 230
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 226
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 224
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 223
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 220
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 219
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 215
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 211
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 211
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 208
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 208
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 204
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 203
Trap characterization in buried-gate n-channel 6H-SiC JFETs 203
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 194
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 194
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 189
Physical investigation of trap-related effects in power HFETs and their reliability implications 185
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 184
Strain Sensitivity in Thick-Film Resistors 175
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 175
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 173
Deep traps in Beta-rhombohedral boron 168
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 164
Impact-ionization effects in advanced Si bipolar transistors 162
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 161
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 152
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 148
Numerical analysis of hot electron degradation modes in power HFETs 145
Trap-related effects in 6H-SiC buried-gate JFETs 142
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 139
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 123
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 123
Deep levels in silicon carbide Schottky diodes 116
Epitaxial silicon carbide charge particle detectors 113
Surface-related kink effect in AlGaAs/GaAs power HFETs 113
Electric field distribution in irradiated silicon detectors 108
Double-junction effect in proton-irradiated silicon diodes 94
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 90
Influence of substrate on the performance of semi-insulating GaAs detectors 78
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 10.463
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Categoria #
all - tutte 41.325
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 41.325
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021634 0 0 0 0 0 88 120 108 97 124 50 47
2021/2022834 25 118 80 59 21 87 53 24 68 51 161 87
2022/2023934 98 99 50 89 81 204 18 87 118 8 35 47
2023/2024434 22 29 22 76 123 28 19 48 8 18 5 36
2024/20252.426 125 19 21 157 469 344 173 162 200 61 371 324
2025/20261.768 240 290 334 391 450 63 0 0 0 0 0 0
Totale 10.463