We show that, differently from what generally accepted for GaAs- and InP-based HEMTs, where the kink is attributed to accumulation of impact-ionization-induced holes in the source access region [1,2], the kink arises in AlGaAs/GaAs HFETs from the combined effect of impact ionization and traps located at the gate-drain recess surface. Kink enhancement after hot-electron stress is a consequence of trap-density increase at this surface.
Surface-related kink effect in AlGaAs/GaAs power HFETs / Tediosi, Erika; Verzellesi, Giovanni; Canali, Claudio; G., Sozzi; R., Menozzi; C., Lanzieri. - STAMPA. - (2001), pp. 139-140. (Intervento presentato al convegno Workshop On Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) tenutosi a Quartu S. Elena (Cagliari, Italy) nel May 2001).
Surface-related kink effect in AlGaAs/GaAs power HFETs
TEDIOSI, Erika;VERZELLESI, Giovanni;CANALI, Claudio;
2001
Abstract
We show that, differently from what generally accepted for GaAs- and InP-based HEMTs, where the kink is attributed to accumulation of impact-ionization-induced holes in the source access region [1,2], the kink arises in AlGaAs/GaAs HFETs from the combined effect of impact ionization and traps located at the gate-drain recess surface. Kink enhancement after hot-electron stress is a consequence of trap-density increase at this surface.
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