4He+ backscattering spectrometry and x-ray diffractometry were used to study the formation of Ni and Pt silicides in Si(cryst.)/M film structures with different metal film thicknesses ranging from 800 to 5000 Å. Results clearly show that first the phase richer in metal (Ni2Si, Pt2Si) grows and continues to grow until all available metal is reacted, then the phase richer in Si (PtSi, NiSi) starts to grow. Present results prove that in Si(cryst.)/Pt or Ni interactions the growth phase is determined the reaction kinetics and that diffusion of metal atoms through Pt2Si and Ni2Si is fundamental in keeping the reaction going.
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics / Canali, Claudio; F., Catellani; Ottaviani, Giampiero; Prudenziati, Maria. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 33:(1978), pp. 187-190.
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics
CANALI, Claudio;OTTAVIANI, Giampiero;PRUDENZIATI, Maria
1978
Abstract
4He+ backscattering spectrometry and x-ray diffractometry were used to study the formation of Ni and Pt silicides in Si(cryst.)/M film structures with different metal film thicknesses ranging from 800 to 5000 Å. Results clearly show that first the phase richer in metal (Ni2Si, Pt2Si) grows and continues to grow until all available metal is reacted, then the phase richer in Si (PtSi, NiSi) starts to grow. Present results prove that in Si(cryst.)/Pt or Ni interactions the growth phase is determined the reaction kinetics and that diffusion of metal atoms through Pt2Si and Ni2Si is fundamental in keeping the reaction going.
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