OTTAVIANI, Giampiero

	Titolo	Data di pubblicazione	Autore(i)
1	X-ray reflectivity study of hydrogen implanted silicon	2006	P. DUBCEK; B. PIVAC; S. BERNSTORFF; F. CORNI; R. TONINI; G. OTTAVIANI
2	Visible photoluminescence from He‐implanted silicon	1995	D. Bisero; F. Corni; C. Nobili; R. Tonini; G. Ottaviani; C. Mazzoleni; L. Pavesi
3	Visible luminescence from silicon by hydrogen implantation and annealing treatments	1994	PAVESI L; GIEBEL G; TONINI R; CORNI F; NOBILI C; OTTAVIANI G
4	Visible light emission from silicon implanted and annealed SiO2 layers	1997	Ghislotti G; Nielsen B; AsokaKumar P; Lynn KG; DiMauro LF; Bottani CE; Corni F; Tonini R; Ottaviani GP
5	Using evidence from nanocavities to assess the vibrational properties of external surfaces	2012	G.F. Cerofolini; F. Corni; S. Frabboni; G. Ottaviani; E. Romano; R. Tonini; D. Narducci
6	Understand Time Resolved Reflectivity by simple experiments	1993	F. CORNI; MAZZEGA E; MICHELINI M; OTTAVIANI G
7	Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon	2000	CEROFOLINI G.F.; CALZOLARI G.; F. CORNI; NOBILI C.; OTTAVIANI G.; TONINI R.
8	Transmission electron microscopy study of helium implanted silicon	2018	Frabboni, Stefano; Corni, Federico; Tonini, Rita; Nobili, Carlo Emanuele; Ottaviani, Giampiero
9	Transmission Electron Microscopy study of Helium Implanted Silicon	2004	Frabboni, S.; Corni, F.; Tonini, R.; Nobili, C.; Ottaviani, G.
10	Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon	2004	S. Frabboni; GC Gazzadi; L. Felisari; R. Tonini; F. Corni; G. Ottaviani
11	A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction	2010	Romano, E.; Cerofolini, G. F.; Narducci, D.; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita
12	Thermal desorption spectra from cavities in helium-implanted silicon	2000	Cerofolini GF; Calzolari G; Corni F; Frabboni S; Nobili C; Ottaviani G; Tonini R
13	Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna	2010	F. Corni; G. Ottaviani; A. Mossenta
14	Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si	1996	Corni F; Frabboni S; Tonini R; Ottaviani G; Queirolo G
15	SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION	1992	CORNI F; FRABBONI S; OTTAVIANI G; QUEIROLO G; BISERO D; BRESOLIN C; FABBRI R; SERVIDORI M
16	Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments	2006	C. MACCHI; S. MARIAZZI; G. P. KARWASZ; R. S. BRUSA; P. FOLEGATI; S. FRABBONI; G. OTTAVIANI
17	Silicon interstitials generation during the exposure of silicon to hydrogen plasma	1996	Tonini R; Monelli A; Corni F; Frabboni S; Ottaviani G; Queirolo G
18	SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID	1992	CEROFOLINI GF; CORNI F; OTTAVIANI G; TONINI R
19	Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy	1996	F. CORNI; OTTAVIANI G; MICHELINI M; MICHELUTTI G.L; SANTI L; STEFANEL A
20	Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion	2002	Pivac B; Rakvin B; Tonini R; Corni F; Ottaviani G