W-Si-N layers about 200 nm thick with different nitrogen content were reactively sputtered from a W5Si3 target on oxidized silicon substrates. The thermal stability of the films´ composition and resistivity was studied with ion beam analysis and four-point probe measurements. Upon vacuum annealing from 600 to 980 degrees C for 1.5 h, a sample with an initial 56 at. % of nitrogen gradually loses nitrogen down to 36%. This composition lies close to the W-Si3N4 tie line. Concurrently, the room temperature resistivity decreases from 4.7 to about 2 m Omega cm. The composition changes only a little for a sample whose initial composition is near the W-Si3N4 tie line and the resistivity changes significantly less than for the nitrogen-rich film. Interpretations are discussed.
W-Si-N layers about 200 nm thick with different nitrogen content were reactively sputtered from a W5Si3 target on oxidized silicon substrates. The thermal stability of the films' composition and resistivity was studied with ion beam analysis and four-point probe measurements. Upon vacuum annealing from 600 to 980 degrees C for 1.5 h, a sample with an initial 56 at. % of nitrogen gradually loses nitrogen down to 36%. This composition lies close to the W-Si3N4 tie line. Concurrently, the room temperature resistivity decreases from 4.7 to about 2 m Omega cm. The composition changes only a little for a sample whose initial composition is near the W-Si3N4 tie line and the resistivity changes significantly less than for the nitrogen-rich film. Interpretations are discussed. (c) 2006 American Institute of Physics.
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing / Vomiero, A; Marchi, Eb; Mariotto, G; Quaranta, A; Della Mea, G; Ottaviani, G; Tonini, R; Butturi, M; Martinelli, G. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 88:3(2006), pp. 1-3. [10.1063/1.2166691]
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing
Ottaviani, G;Butturi, M;
2006
Abstract
W-Si-N layers about 200 nm thick with different nitrogen content were reactively sputtered from a W5Si3 target on oxidized silicon substrates. The thermal stability of the films' composition and resistivity was studied with ion beam analysis and four-point probe measurements. Upon vacuum annealing from 600 to 980 degrees C for 1.5 h, a sample with an initial 56 at. % of nitrogen gradually loses nitrogen down to 36%. This composition lies close to the W-Si3N4 tie line. Concurrently, the room temperature resistivity decreases from 4.7 to about 2 m Omega cm. The composition changes only a little for a sample whose initial composition is near the W-Si3N4 tie line and the resistivity changes significantly less than for the nitrogen-rich film. Interpretations are discussed. (c) 2006 American Institute of Physics.
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