We present device simulation results showing that only a simultaneous, localised increase of the interface-state density at the gate-drain recess surface and of negative charge at the channel-buffer interface can thoroughly account for the hot-electron degradation modes observed experimentally in AlGaAs-GaAs HFETs, including drain saturation current degradation, reverse gate-current increase, kink and gate-lag enhancement.
Numerical analysis of hot electron degradation modes in power HFETs / Mazzanti, Andrea; Verzellesi, Giovanni; Canali, Claudio; G., Sozzi; R., Menozzi. - STAMPA. - (2002). (Intervento presentato al convegno Workshop on Physical Simulation of Semiconductor Devices (PSSD) tenutosi a Leeds (UK), nel Mar. 2002).
Numerical analysis of hot electron degradation modes in power HFETs
MAZZANTI, Andrea;VERZELLESI, Giovanni;CANALI, Claudio;
2002
Abstract
We present device simulation results showing that only a simultaneous, localised increase of the interface-state density at the gate-drain recess surface and of negative charge at the channel-buffer interface can thoroughly account for the hot-electron degradation modes observed experimentally in AlGaAs-GaAs HFETs, including drain saturation current degradation, reverse gate-current increase, kink and gate-lag enhancement.
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