In this paper, deep-level effects are investigated in 6H-SiC, buried gate, n-channel JFETs, by means of measurements and simulations of the drain-current transients following a gate-source step, allowing the energetic and spatial localization of the traps to be inferred.
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs / Verzellesi, Giovanni; G., Meneghesso; A., Cavallini; E., Zanoni; Canali, Claudio. - STAMPA. - (2001), pp. 55-56. (Intervento presentato al convegno European Heterostructure Technology Workshop tenutosi a Padova (Italy) nel Oct. 2001).
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs
VERZELLESI, Giovanni;CANALI, Claudio
2001
Abstract
In this paper, deep-level effects are investigated in 6H-SiC, buried gate, n-channel JFETs, by means of measurements and simulations of the drain-current transients following a gate-source step, allowing the energetic and spatial localization of the traps to be inferred.
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