The light sensitivity of gate-lag transients and current-DLTS signals is experimentally analyzed in AlGaAs-GaAs HFETs and reproduced by 2D device simulations attributing the observed behaviors to the hole-trap performance of surface deep levels.
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs / Basile, Alberto Francesco; Verzellesi, Giovanni; Canali, Claudio; A., Cavallini; A., Castaldini; C., Lanzieri. - STAMPA. - (2004). (Intervento presentato al convegno European Workshop on Heterostructure Technology tenutosi a Koutouloufari (Creete, Greece) nel Oct. 2004).
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs
BASILE, Alberto Francesco;VERZELLESI, Giovanni;CANALI, Claudio;
2004
Abstract
The light sensitivity of gate-lag transients and current-DLTS signals is experimentally analyzed in AlGaAs-GaAs HFETs and reproduced by 2D device simulations attributing the observed behaviors to the hole-trap performance of surface deep levels.
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