The kink effect is a detrimental phenomenon for the performance of III-V compound semiconductor FETs, resulting in output-conductance increase, transconductance compression, and dispersion between DC and RF characteristics. Although several papers have been dedicated to it, the physical origin of this effect is still a debated issue [1-4]. The aim of this work is to provide insight about the physical origin and the dynamic behavior of the kink in AlGaAs/GaAs HFETs.
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs / Mazzanti, Andrea; Verzellesi, Giovanni; Canali, Claudio; Chini, Alessandro; G., Meneghesso; E., Zanoni; C., Lanzieri. - STAMPA. - (2001), pp. 73-74. (Intervento presentato al convegno European Heterostructure Technology Conference (HeTech) tenutosi a Padova (Italy) nel Oct. 2001).
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs
MAZZANTI, Andrea;VERZELLESI, Giovanni;CANALI, Claudio;CHINI, Alessandro;
2001
Abstract
The kink effect is a detrimental phenomenon for the performance of III-V compound semiconductor FETs, resulting in output-conductance increase, transconductance compression, and dispersion between DC and RF characteristics. Although several papers have been dedicated to it, the physical origin of this effect is still a debated issue [1-4]. The aim of this work is to provide insight about the physical origin and the dynamic behavior of the kink in AlGaAs/GaAs HFETs.
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