Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-effect transistors in a non-trivial way, resulting in reduced drain current fast change but shortened drain current transient. Two-dimensional device simulations accounting for hole traps at the ungated recess surface provide a consistent physical explanation for the observed behaviour.
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs / Verzellesi, Giovanni; Basile, Alberto Francesco; Mazzanti, Andrea; Canali, Claudio; G., Meneghesso; E., Zanoni. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 39:10(2003), pp. 810-811. [10.1049/el:20030529]
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs
VERZELLESI, Giovanni;BASILE, Alberto Francesco;MAZZANTI, Andrea;CANALI, Claudio;
2003
Abstract
Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-effect transistors in a non-trivial way, resulting in reduced drain current fast change but shortened drain current transient. Two-dimensional device simulations accounting for hole traps at the ungated recess surface provide a consistent physical explanation for the observed behaviour.
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