We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxial Schottky diode exposed to 5.48- and 2.00-MeV alpha particles. Hundred percent Charge Collection Efficiency (CCE) is, in particular, demonstrated for the 2.00-MeV alpha particles at reverse voltages higher than 40 V. By comparing measured CCE values with the outcomes of drift-diffusion simulations, a value of 500 ns is inferred for the hole lifetime within the lowly doped, active layer of virgin samples. The contributions of diffusion and funneling-assisted drift to CCE at low reverse voltages are pointed out.

Investigation on the charge collection properties of a 4H-SiC Schottky diode detector / Verzellesi, Giovanni; Vanni, Paolo; Nava, Filippo; Canali, Claudio. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 476(2002), pp. 717-721.

I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2021