We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxial Schottky diode exposed to 5.48- and 2.00-MeV alpha particles. Hundred percent Charge Collection Efficiency (CCE) is, in particular, demonstrated for the 2.00-MeV alpha particles at reverse voltages higher than 40 V. By comparing measured CCE values with the outcomes of drift-diffusion simulations, a value of 500 ns is inferred for the hole lifetime within the lowly doped, active layer of virgin samples. The contributions of diffusion and funneling-assisted drift to CCE at low reverse voltages are pointed out.
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector / Verzellesi, Giovanni; Vanni, Paolo; Nava, Filippo; Canali, Claudio. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 476(2002), pp. 717-721.
Data di pubblicazione: | 2002 |
Titolo: | Investigation on the charge collection properties of a 4H-SiC Schottky diode detector |
Autore/i: | Verzellesi, Giovanni; Vanni, Paolo; Nava, Filippo; Canali, Claudio |
Autore/i UNIMORE: | |
Rivista: | |
Volume: | 476 |
Pagina iniziale: | 717 |
Pagina finale: | 721 |
Codice identificativo ISI: | WOS:000173496700027 |
Codice identificativo Scopus: | 2-s2.0-0037059395 |
Citazione: | Investigation on the charge collection properties of a 4H-SiC Schottky diode detector / Verzellesi, Giovanni; Vanni, Paolo; Nava, Filippo; Canali, Claudio. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 476(2002), pp. 717-721. |
Tipologia | Articolo su rivista |
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