The features of current deep level transient spectroscopy I-DLTS spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor bulk, which can only be detected in emission-mode by I-DLTS, deep levels locatedat the ungated device surface are shown to be revealed both in emission and capture transients by I-DLTS. Experimental and simulation results indicate that this behavior originates from inherent physical properties of surface deep levels interacting with holes attracted at the ungated surface by the negative charge associated with ionized traps.
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors / A., Cavallini; Verzellesi, Giovanni; Basile, Alberto Francesco; Canali, Claudio; A., Castaldini; E., Zanoni. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 94:8(2003), pp. 5279-5301. [10.1063/1.1611629]
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors
VERZELLESI, Giovanni;BASILE, Alberto Francesco;CANALI, Claudio;
2003
Abstract
The features of current deep level transient spectroscopy I-DLTS spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor bulk, which can only be detected in emission-mode by I-DLTS, deep levels locatedat the ungated device surface are shown to be revealed both in emission and capture transients by I-DLTS. Experimental and simulation results indicate that this behavior originates from inherent physical properties of surface deep levels interacting with holes attracted at the ungated surface by the negative charge associated with ionized traps.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
