The rate of germanide formation and the composition of the resulting compounds were investigated when thin (100 -250 nm) Pd films, vacuum evaporated onto various Ge substrates, were annealed at 170-270°C for 10 min to 27 h. Both phases Pd2Ge and PdGe were observed on singlecrystal and amorphous (vacuum-deposited) Ge substrates. In all cases the compound layers grow with a (time)1/2 dependence with an activation energy of 1.5 ± 0.1 eV. Moreover, the abserved value of the growth rate depends on the crystalline nature of the Ge substrate. On (111) and (100) substrates the rates are similar, and they are 3 times lower than those on amorphous substrates.

Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium / Ottaviani, Giampiero; Canali, Claudio; G., Ferrari; R., Ferrari; G., Majni; Prudenziati, Maria; S. S. L. a., U.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 47(1977), pp. 187-194.

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