Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs / Mazzanti, Andrea; Verzellesi, Giovanni; Basile, Alberto Francesco; Canali, Claudio; G., Sozzi; R., Menozzi. - STAMPA. - (2002), pp. 389-392. ((Intervento presentato al convegno European Gallium Arsenide and Other Semiconductors Applications (GAAS) tenutosi a Milano (Italy) nel Sept. 2002.
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs
MAZZANTI, Andrea;VERZELLESI, Giovanni;BASILE, Alberto Francesco;CANALI, Claudio;
2002
Abstract
Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.
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